Seeding of silicon wire growth by out-diffused metal precipitates

Vidya Ganapati; David P. Fenning; Mariana I. Bertoni; Chito E. Kendrick; Alexandria E. Fecych; Joan M. Redwing; Tonio Buonassisi

doi:10.1002/smll.201002250

Seeding of silicon wire growth by out-diffused metal precipitates

Vidya Ganapati, David P. Fenning, Mariana I. Bertoni, Chito E. Kendrick, Alexandria E. Fecych, Joan M. Redwing, Tonio Buonassisi

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Metals diffused into bulk silicon can be manipulated to out-diffuse and precipitate in microsized droplets at surfaces, allowing for subsequent silicon wire growth. This technique allows for both high-throughput and precision in the size and positions of metal droplets on the silicon surface.

Original language	English (US)
Pages (from-to)	563-567
Number of pages	5
Journal	Small
Volume	7
Issue number	5
DOIs	https://doi.org/10.1002/smll.201002250
State	Published - Mar 7 2011

All Science Journal Classification (ASJC) codes

Biotechnology
Biomaterials
General Chemistry
General Materials Science

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10.1002/smll.201002250

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title = "Seeding of silicon wire growth by out-diffused metal precipitates",

abstract = "Metals diffused into bulk silicon can be manipulated to out-diffuse and precipitate in microsized droplets at surfaces, allowing for subsequent silicon wire growth. This technique allows for both high-throughput and precision in the size and positions of metal droplets on the silicon surface.",

author = "Vidya Ganapati and Fenning, {David P.} and Bertoni, {Mariana I.} and Kendrick, {Chito E.} and Fecych, {Alexandria E.} and Redwing, {Joan M.} and Tonio Buonassisi",

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T1 - Seeding of silicon wire growth by out-diffused metal precipitates

AU - Ganapati, Vidya

AU - Fenning, David P.

AU - Bertoni, Mariana I.

AU - Kendrick, Chito E.

AU - Fecych, Alexandria E.

AU - Redwing, Joan M.

AU - Buonassisi, Tonio

PY - 2011/3/7

Y1 - 2011/3/7

N2 - Metals diffused into bulk silicon can be manipulated to out-diffuse and precipitate in microsized droplets at surfaces, allowing for subsequent silicon wire growth. This technique allows for both high-throughput and precision in the size and positions of metal droplets on the silicon surface.

AB - Metals diffused into bulk silicon can be manipulated to out-diffuse and precipitate in microsized droplets at surfaces, allowing for subsequent silicon wire growth. This technique allows for both high-throughput and precision in the size and positions of metal droplets on the silicon surface.

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SP - 563

EP - 567

JO - Small

JF - Small

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ER -

Seeding of silicon wire growth by out-diffused metal precipitates

Abstract

All Science Journal Classification (ASJC) codes

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