Selective area doping for Mott neuromorphic electronics

Sunbin Deng, Haoming Yu, Tae Joon Park, A. N.M. Nafiul Islam, Sukriti Manna, Alexandre Pofelski, Qi Wang, Yimei Zhu, Subramanian K.R.S. Sankaranarayanan, Abhronil Sengupta, Shriram Ramanathan

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The cointegration of artificial neuronal and synaptic devices with homotypic materials and structures can greatly simplify the fabrication of neuromorphic hardware. We demonstrate experimental realization of vanadium dioxide (VO2) artificial neurons and synapses on the same substrate through selective area carrier doping. By locally configuring pairs of catalytic and inert electrodes that enable nanoscale control over carrier density, volatility or nonvolatility can be appropriately assigned to each two-terminal Mott memory device per lithographic design, and both neuron- and synapse-like devices are successfully integrated on a single chip. Feedforward excitation and inhibition neural motifs are demonstrated at hardware level, followed by simulation of network-level handwritten digit and fashion product recognition tasks with experimental characteristics. Spatially selective electron doping opens up previously unidentified avenues for integration of emerging correlated semiconductors in electronic device technologies.

Original languageEnglish (US)
Article numbereade4838
JournalScience Advances
Volume9
Issue number11
DOIs
StatePublished - Mar 2023

All Science Journal Classification (ASJC) codes

  • General

Cite this