Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

Mark D. Losego; Elizabeth A. Paisley; H. Spalding Craft; Peter G. Lam; Edward Sachet; Seiji Mita; Ramon Collazo; Zlatko Sitar; Jon Paul Maria

doi:10.1557/jmr.2015.332

Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

Mark D. Losego, Elizabeth A. Paisley, H. Spalding Craft, Peter G. Lam, Edward Sachet, Seiji Mita, Ramon Collazo, Zlatko Sitar, Jon Paul Maria

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Selective area growth of thin films reduces the number of steps in microfabrication processing and enables novel device structures. Here, we report, for the first time, selective area epitaxy of an oxide material on a G_aN surface. Chlorination of the G_aN surface via wet chemical processing is found effective to disrupt Mg adsorption and selectively prevent molecular beam epitaxy growth of M_gO. M_gO films grown on neighboring, nonchlorinated surfaces are epitaxial with a (111) M_gO||(0001) GaN crystallographic relationship. Better than 3 μm lateral resolution for the selective area growth of M_gO on G_aN is demonstrated.

Original language	English (US)
Pages (from-to)	36-45
Number of pages	10
Journal	Journal of Materials Research
Volume	31
Issue number	1
DOIs	https://doi.org/10.1557/jmr.2015.332
State	Published - 2016

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces",

abstract = "Selective area growth of thin films reduces the number of steps in microfabrication processing and enables novel device structures. Here, we report, for the first time, selective area epitaxy of an oxide material on a GaN surface. Chlorination of the GaN surface via wet chemical processing is found effective to disrupt Mg adsorption and selectively prevent molecular beam epitaxy growth of MgO. MgO films grown on neighboring, nonchlorinated surfaces are epitaxial with a (111) MgO||(0001) GaN crystallographic relationship. Better than 3 μm lateral resolution for the selective area growth of MgO on GaN is demonstrated.",

author = "Losego, {Mark D.} and Paisley, {Elizabeth A.} and Craft, {H. Spalding} and Lam, {Peter G.} and Edward Sachet and Seiji Mita and Ramon Collazo and Zlatko Sitar and Maria, {Jon Paul}",

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year = "2016",

doi = "10.1557/jmr.2015.332",

language = "English (US)",

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T1 - Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

AU - Losego, Mark D.

AU - Paisley, Elizabeth A.

AU - Craft, H. Spalding

AU - Lam, Peter G.

AU - Sachet, Edward

AU - Mita, Seiji

AU - Collazo, Ramon

AU - Sitar, Zlatko

AU - Maria, Jon Paul

PY - 2016

Y1 - 2016

N2 - Selective area growth of thin films reduces the number of steps in microfabrication processing and enables novel device structures. Here, we report, for the first time, selective area epitaxy of an oxide material on a GaN surface. Chlorination of the GaN surface via wet chemical processing is found effective to disrupt Mg adsorption and selectively prevent molecular beam epitaxy growth of MgO. MgO films grown on neighboring, nonchlorinated surfaces are epitaxial with a (111) MgO||(0001) GaN crystallographic relationship. Better than 3 μm lateral resolution for the selective area growth of MgO on GaN is demonstrated.

AB - Selective area growth of thin films reduces the number of steps in microfabrication processing and enables novel device structures. Here, we report, for the first time, selective area epitaxy of an oxide material on a GaN surface. Chlorination of the GaN surface via wet chemical processing is found effective to disrupt Mg adsorption and selectively prevent molecular beam epitaxy growth of MgO. MgO films grown on neighboring, nonchlorinated surfaces are epitaxial with a (111) MgO||(0001) GaN crystallographic relationship. Better than 3 μm lateral resolution for the selective area growth of MgO on GaN is demonstrated.

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Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

Abstract

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