Selective plating for junction delineation in silicon nanowires

Chad M. Eichfeld; Carolyn Wood; Bangzhi Liu; Sarah M. Eichfeld; Joan M. Redwing; Suzanne E. Mohney

doi:10.1021/nl0710248

Selective plating for junction delineation in silicon nanowires

Chad M. Eichfeld, Carolyn Wood, Bangzhi Liu, Sarah M. Eichfeld, Joan M. Redwing, Suzanne E. Mohney

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The in situ growth of p-n junctions in silicon nanowires enables the fabrication of a variety of nanoscale electronic devices. We have developed a method for selective coating of Au onto n-type segments of silicon nanowire p-n junctions. Selective plating allows for quick verification of the position of p-n junctions along the nanowire using electron microscopy and allows for measurement of segment length.

Original language	English (US)
Pages (from-to)	2642-2644
Number of pages	3
Journal	Nano letters
Volume	7
Issue number	9
DOIs	https://doi.org/10.1021/nl0710248
State	Published - Sep 2007

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl0710248

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title = "Selective plating for junction delineation in silicon nanowires",

abstract = "The in situ growth of p-n junctions in silicon nanowires enables the fabrication of a variety of nanoscale electronic devices. We have developed a method for selective coating of Au onto n-type segments of silicon nanowire p-n junctions. Selective plating allows for quick verification of the position of p-n junctions along the nanowire using electron microscopy and allows for measurement of segment length.",

author = "Eichfeld, {Chad M.} and Carolyn Wood and Bangzhi Liu and Eichfeld, {Sarah M.} and Redwing, {Joan M.} and Mohney, {Suzanne E.}",

year = "2007",

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T1 - Selective plating for junction delineation in silicon nanowires

AU - Eichfeld, Chad M.

AU - Wood, Carolyn

AU - Liu, Bangzhi

AU - Eichfeld, Sarah M.

AU - Redwing, Joan M.

AU - Mohney, Suzanne E.

PY - 2007/9

Y1 - 2007/9

N2 - The in situ growth of p-n junctions in silicon nanowires enables the fabrication of a variety of nanoscale electronic devices. We have developed a method for selective coating of Au onto n-type segments of silicon nanowire p-n junctions. Selective plating allows for quick verification of the position of p-n junctions along the nanowire using electron microscopy and allows for measurement of segment length.

AB - The in situ growth of p-n junctions in silicon nanowires enables the fabrication of a variety of nanoscale electronic devices. We have developed a method for selective coating of Au onto n-type segments of silicon nanowire p-n junctions. Selective plating allows for quick verification of the position of p-n junctions along the nanowire using electron microscopy and allows for measurement of segment length.

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JF - Nano letters

IS - 9

ER -

Selective plating for junction delineation in silicon nanowires

Abstract

All Science Journal Classification (ASJC) codes

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