Selective plating for junction delineation in silicon nanowires

Chad Eichfeld; Carolyn Wood; Bangzhi Liu; Sarah M. Eichfeld; Joan Marie Redwing; Suzanne E. Mohney

doi:10.1021/nl0710248

Selective plating for junction delineation in silicon nanowires

Chad Eichfeld, Carolyn Wood, Bangzhi Liu, Sarah M. Eichfeld, Joan Marie Redwing, Suzanne E. Mohney

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The in situ growth of p-n junctions in silicon nanowires enables the fabrication of a variety of nanoscale electronic devices. We have developed a method for selective coating of Au onto n-type segments of silicon nanowire p-n junctions. Selective plating allows for quick verification of the position of p-n junctions along the nanowire using electron microscopy and allows for measurement of segment length.

Original language	English (US)
Pages (from-to)	2642-2644
Number of pages	3
Journal	Nano Letters
Volume	7
Issue number	9
DOIs	https://doi.org/10.1021/nl0710248
State	Published - Sep 1 2007

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl0710248

Cite this

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title = "Selective plating for junction delineation in silicon nanowires",

abstract = "The in situ growth of p-n junctions in silicon nanowires enables the fabrication of a variety of nanoscale electronic devices. We have developed a method for selective coating of Au onto n-type segments of silicon nanowire p-n junctions. Selective plating allows for quick verification of the position of p-n junctions along the nanowire using electron microscopy and allows for measurement of segment length.",

author = "Chad Eichfeld and Carolyn Wood and Bangzhi Liu and Eichfeld, {Sarah M.} and Redwing, {Joan Marie} and Mohney, {Suzanne E.}",

year = "2007",

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T1 - Selective plating for junction delineation in silicon nanowires

AU - Eichfeld, Chad

AU - Wood, Carolyn

AU - Liu, Bangzhi

AU - Eichfeld, Sarah M.

AU - Redwing, Joan Marie

AU - Mohney, Suzanne E.

PY - 2007/9/1

Y1 - 2007/9/1

N2 - The in situ growth of p-n junctions in silicon nanowires enables the fabrication of a variety of nanoscale electronic devices. We have developed a method for selective coating of Au onto n-type segments of silicon nanowire p-n junctions. Selective plating allows for quick verification of the position of p-n junctions along the nanowire using electron microscopy and allows for measurement of segment length.

AB - The in situ growth of p-n junctions in silicon nanowires enables the fabrication of a variety of nanoscale electronic devices. We have developed a method for selective coating of Au onto n-type segments of silicon nanowire p-n junctions. Selective plating allows for quick verification of the position of p-n junctions along the nanowire using electron microscopy and allows for measurement of segment length.

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JO - Nano Letters

JF - Nano Letters

IS - 9

ER -

Selective plating for junction delineation in silicon nanowires

Abstract

All Science Journal Classification (ASJC) codes

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