Abstract
The in situ growth of p-n junctions in silicon nanowires enables the fabrication of a variety of nanoscale electronic devices. We have developed a method for selective coating of Au onto n-type segments of silicon nanowire p-n junctions. Selective plating allows for quick verification of the position of p-n junctions along the nanowire using electron microscopy and allows for measurement of segment length.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2642-2644 |
| Number of pages | 3 |
| Journal | Nano letters |
| Volume | 7 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 2007 |
All Science Journal Classification (ASJC) codes
- Bioengineering
- General Chemistry
- General Materials Science
- Condensed Matter Physics
- Mechanical Engineering