Self-aligned graphene-on-SiC and graphene-on-Si MOSFETs on 75 mm wafers

J. S. Moon, D. Curtis, M. Hu, S. Bui, D. Wheeler, T. Marshall, H. Sharifi, D. Wong, D. K. Gaskilt, P. M. Campbel, P. Asbeck, G. Jemigan, J. Tedesco, B. VanMil, R. Myersward, C. Eddy, X. Weng, J. Robinson, M. Fanton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Graphene has shown the highest carrier Hall mobility of> 100,000 cm 2/Vs with theoretical saturation velocity (V sat) and source-injection velocity converging at ∼5E7 cm/sec [1] and ∼6E7 cm/sec, respectively. A potential combination of high current-carrying density, transconductance, and low access resistance could make graphene an attractive candidate for high-performance RF applications. So far, epitaxial graphene MOSFETs [2] in the early stages of development have revealed technical challenges: the currentvoltage characteristics are quasi-linear with weak saturation behaviors and low transconductance per gate capacitance <100 mS/mm). In addition, the lon/loff ratio has been <10. While epitaxial graphene RF FETs with Fmax of 14 GHz per 2 μm gate length were demonstrated in a self-aligned top-gated layout with the highest ever on-state current density of 3 A/mm at V ds = 5 V, field-effect mobility was limited below 200 cm2/Vs. There are only a few reports of a graphene-on-Si platform with on-stage current <0.02 mA/mm. [3].

Original languageEnglish (US)
Title of host publication68th Device Research Conference, DRC 2010
Number of pages2
StatePublished - 2010
Event68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States
Duration: Jun 21 2010Jun 23 2010

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other68th Device Research Conference, DRC 2010
Country/TerritoryUnited States
CityNotre Dame, IN

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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