TY - GEN
T1 - Self-aligned graphene-on-SiC and graphene-on-Si MOSFETs on 75 mm wafers
AU - Moon, J. S.
AU - Curtis, D.
AU - Hu, M.
AU - Bui, S.
AU - Wheeler, D.
AU - Marshall, T.
AU - Sharifi, H.
AU - Wong, D.
AU - Gaskilt, D. K.
AU - Campbel, P. M.
AU - Asbeck, P.
AU - Jemigan, G.
AU - Tedesco, J.
AU - VanMil, B.
AU - Myersward, R.
AU - Eddy, C.
AU - Weng, X.
AU - Robinson, J.
AU - Fanton, M.
PY - 2010
Y1 - 2010
N2 - Graphene has shown the highest carrier Hall mobility of> 100,000 cm 2/Vs with theoretical saturation velocity (V sat) and source-injection velocity converging at ∼5E7 cm/sec [1] and ∼6E7 cm/sec, respectively. A potential combination of high current-carrying density, transconductance, and low access resistance could make graphene an attractive candidate for high-performance RF applications. So far, epitaxial graphene MOSFETs [2] in the early stages of development have revealed technical challenges: the currentvoltage characteristics are quasi-linear with weak saturation behaviors and low transconductance per gate capacitance <100 mS/mm). In addition, the lon/loff ratio has been <10. While epitaxial graphene RF FETs with Fmax of 14 GHz per 2 μm gate length were demonstrated in a self-aligned top-gated layout with the highest ever on-state current density of 3 A/mm at V ds = 5 V, field-effect mobility was limited below 200 cm2/Vs. There are only a few reports of a graphene-on-Si platform with on-stage current <0.02 mA/mm. [3].
AB - Graphene has shown the highest carrier Hall mobility of> 100,000 cm 2/Vs with theoretical saturation velocity (V sat) and source-injection velocity converging at ∼5E7 cm/sec [1] and ∼6E7 cm/sec, respectively. A potential combination of high current-carrying density, transconductance, and low access resistance could make graphene an attractive candidate for high-performance RF applications. So far, epitaxial graphene MOSFETs [2] in the early stages of development have revealed technical challenges: the currentvoltage characteristics are quasi-linear with weak saturation behaviors and low transconductance per gate capacitance <100 mS/mm). In addition, the lon/loff ratio has been <10. While epitaxial graphene RF FETs with Fmax of 14 GHz per 2 μm gate length were demonstrated in a self-aligned top-gated layout with the highest ever on-state current density of 3 A/mm at V ds = 5 V, field-effect mobility was limited below 200 cm2/Vs. There are only a few reports of a graphene-on-Si platform with on-stage current <0.02 mA/mm. [3].
UR - https://www.scopus.com/pages/publications/77957566201
UR - https://www.scopus.com/pages/publications/77957566201#tab=citedBy
U2 - 10.1109/DRC.2010.5551910
DO - 10.1109/DRC.2010.5551910
M3 - Conference contribution
AN - SCOPUS:77957566201
SN - 9781424478705
T3 - Device Research Conference - Conference Digest, DRC
SP - 209
EP - 210
BT - 68th Device Research Conference, DRC 2010
T2 - 68th Device Research Conference, DRC 2010
Y2 - 21 June 2010 through 23 June 2010
ER -