Self-assembled patterning of ultrathin silicides by local oxidation

S. Mantl; Q. T. Zhao; B. Kabius

doi:10.1557/S0883769400052878

Self-assembled patterning of ultrathin silicides by local oxidation

S. Mantl, Q. T. Zhao, B. Kabius

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The self-assembled patterning method based on local oxidation is fast, independent of wafer size, and suitable for high throughput. Patterning is achieved by controlling the diffusion reactions in ultrathin films with the application of stress fields. The processes involved are standard silicon processing, except for the growth of the single crystalline silicide layer. The thermal budget is similar to that needed for dopant activation in silicon processing.

Original language	English (US)
Pages (from-to)	31-35
Number of pages	5
Journal	MRS Bulletin
Volume	24
Issue number	8
DOIs	https://doi.org/10.1557/S0883769400052878
State	Published - Aug 1999

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Physical and Theoretical Chemistry

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title = "Self-assembled patterning of ultrathin silicides by local oxidation",

abstract = "The self-assembled patterning method based on local oxidation is fast, independent of wafer size, and suitable for high throughput. Patterning is achieved by controlling the diffusion reactions in ultrathin films with the application of stress fields. The processes involved are standard silicon processing, except for the growth of the single crystalline silicide layer. The thermal budget is similar to that needed for dopant activation in silicon processing.",

author = "S. Mantl and Zhao, {Q. T.} and B. Kabius",

year = "1999",

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N2 - The self-assembled patterning method based on local oxidation is fast, independent of wafer size, and suitable for high throughput. Patterning is achieved by controlling the diffusion reactions in ultrathin films with the application of stress fields. The processes involved are standard silicon processing, except for the growth of the single crystalline silicide layer. The thermal budget is similar to that needed for dopant activation in silicon processing.

AB - The self-assembled patterning method based on local oxidation is fast, independent of wafer size, and suitable for high throughput. Patterning is achieved by controlling the diffusion reactions in ultrathin films with the application of stress fields. The processes involved are standard silicon processing, except for the growth of the single crystalline silicide layer. The thermal budget is similar to that needed for dopant activation in silicon processing.

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Self-assembled patterning of ultrathin silicides by local oxidation

Abstract

All Science Journal Classification (ASJC) codes

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