Self-assembly of Si nanostructures

Yan Qiu Zhu; Wen Kuang Hsu; Nicole Grobert; Mauricio Terrones; Humberto Terrones; Harold W. Kroto; David R.M. Walton; Bing Qing Wei

doi:10.1016/S0009-2614(00)00440-1

Self-assembly of Si nanostructures

Yan Qiu Zhu, Wen Kuang Hsu, Nicole Grobert, Mauricio Terrones, Humberto Terrones, Harold W. Kroto, David R.M. Walton, Bing Qing Wei

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Flower-like Si nanostructures are formed in high yield, by heating an SiO₂ plate at ca. 1600 °C (Ta heater) under Ar (100 Torr). The product consists of metal-free cubic phase Si nanowires surmounted by bulbous Si tips. HRTEM observations show that the nanowires contain kink and twinning defects, whereas the tips are generally well-crystallized and covered with a thin layer of amorphous SiO_x (x = 1-2). A growth model is proposed to account for these observations.

Original language	English (US)
Pages (from-to)	312-320
Number of pages	9
Journal	Chemical Physics Letters
Volume	322
Issue number	5
DOIs	https://doi.org/10.1016/S0009-2614(00)00440-1
State	Published - May 26 2000

All Science Journal Classification (ASJC) codes

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1016/S0009-2614(00)00440-1

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@article{32b6d7550a5346408502b1ec8c4fc362,

title = "Self-assembly of Si nanostructures",

abstract = "Flower-like Si nanostructures are formed in high yield, by heating an SiO2 plate at ca. 1600 °C (Ta heater) under Ar (100 Torr). The product consists of metal-free cubic phase Si nanowires surmounted by bulbous Si tips. HRTEM observations show that the nanowires contain kink and twinning defects, whereas the tips are generally well-crystallized and covered with a thin layer of amorphous SiOx (x = 1-2). A growth model is proposed to account for these observations.",

author = "Zhu, \{Yan Qiu\} and Hsu, \{Wen Kuang\} and Nicole Grobert and Mauricio Terrones and Humberto Terrones and Kroto, \{Harold W.\} and Walton, \{David R.M.\} and Wei, \{Bing Qing\}",

note = "Funding Information: We thank the Royal Society, the JFCC, Conacyt-M{\'e}xico and DGAPA-UNAM IN 107-296 (HT), EPSRC, and Max-Planck Society Fellowship (BQW) for financial support. We are grateful to J. Thorpe and D. Randall (Sussex) for assistance with TEM and SEM facilities.",

year = "2000",

month = may,

day = "26",

doi = "10.1016/S0009-2614(00)00440-1",

language = "English (US)",

volume = "322",

pages = "312--320",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier B.V.",

number = "5",

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TY - JOUR

T1 - Self-assembly of Si nanostructures

AU - Zhu, Yan Qiu

AU - Hsu, Wen Kuang

AU - Grobert, Nicole

AU - Terrones, Mauricio

AU - Terrones, Humberto

AU - Kroto, Harold W.

AU - Walton, David R.M.

AU - Wei, Bing Qing

N1 - Funding Information: We thank the Royal Society, the JFCC, Conacyt-México and DGAPA-UNAM IN 107-296 (HT), EPSRC, and Max-Planck Society Fellowship (BQW) for financial support. We are grateful to J. Thorpe and D. Randall (Sussex) for assistance with TEM and SEM facilities.

PY - 2000/5/26

Y1 - 2000/5/26

N2 - Flower-like Si nanostructures are formed in high yield, by heating an SiO2 plate at ca. 1600 °C (Ta heater) under Ar (100 Torr). The product consists of metal-free cubic phase Si nanowires surmounted by bulbous Si tips. HRTEM observations show that the nanowires contain kink and twinning defects, whereas the tips are generally well-crystallized and covered with a thin layer of amorphous SiOx (x = 1-2). A growth model is proposed to account for these observations.

AB - Flower-like Si nanostructures are formed in high yield, by heating an SiO2 plate at ca. 1600 °C (Ta heater) under Ar (100 Torr). The product consists of metal-free cubic phase Si nanowires surmounted by bulbous Si tips. HRTEM observations show that the nanowires contain kink and twinning defects, whereas the tips are generally well-crystallized and covered with a thin layer of amorphous SiOx (x = 1-2). A growth model is proposed to account for these observations.

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U2 - 10.1016/S0009-2614(00)00440-1

DO - 10.1016/S0009-2614(00)00440-1

M3 - Article

AN - SCOPUS:0001504021

SN - 0009-2614

VL - 322

SP - 312

EP - 320

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 5

ER -

Self-assembly of Si nanostructures

Abstract

All Science Journal Classification (ASJC) codes

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