Self-assisted nucleation and vapor-solid growth of InAs nanowires on bare Si(111)

Emmanouil Dimakis, Jonas Lähnemann, Uwe Jahn, Steffen Breuer, Maria Hilse, Lutz Geelhaar, Henning Riechert

Research output: Contribution to journalArticlepeer-review

94 Scopus citations


The nucleation and growth of InAs nanowires on bare Si(111) has been investigated by molecular beam epitaxy. Nontapered InAs nanowires with high aspect ratio were grown perpendicular to the substrate without the use of catalyst particles, surface oxide, or other substrate mask. The nucleation of InAs takes place in In-rich areas forming spontaneously on the substrate in the beginning of the growth process. As the nucleation proceeds, the local stoichiometry on the growth interface changes from In-rich to As-rich, and the growth continues in a vapor-solid mode. This transition to As-rich conditions is correlated with the evolution of nanowire morphology, that is, with the growth becoming strictly uniaxial and with well-defined vertical sidewalls forming. The diameter, the number density, and the axial growth rate of the nanowires were found to depend exclusively on the surface diffusivity of In adatoms on the substrate.

Original languageEnglish (US)
Pages (from-to)4001-4008
Number of pages8
JournalCrystal Growth and Design
Issue number9
StatePublished - Sep 7 2011

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics


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