TY - GEN
T1 - Self-Heating and Quality Factor
T2 - 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021
AU - Zheng, Yue
AU - Park, Mingyo
AU - Ansari, Azadeh
AU - Yuan, Chao
AU - Graham, Samuel
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/20
Y1 - 2021/6/20
N2 - Understanding the thermal properties of piezoelectric thin films is essential in studying the performance and ultimate dissipation limits of bulk acoustic wave resonators. Here, we present the experimental and modeled results of thermal conductivity of the in-demand piezoelectric material aluminum scandium nitride (Al1-xScxN), with x = Sc/(Sc+Al) ratio. We construct the three-dimensional (3D) finite-element modeling (FEM) of a back-side etched thin-film bulk acoustic wave resonator (FBAR) with aluminum nitride (AlN) and Al0.7Sc0.3N thin films. Comparison reveals a 26% more temperature rise in Al0.7Sc0.3N FBAR with equal input surface heat density of 2 W/mm2. The trend is consistent with the drastic decrease of thermal conductivity with increasing x in Al1-xScxN. Consequently, as we study the upper limit of the frequency (f), quality factor (Q) product (f. Q) under phonon interactions, Al1-xScxN exhibits a greater amount of degradation due to self-heating. This work reports the first comparison of thermal properties of AlN and Al1-xScxN resonators, critical in material selection for resonator operation under high power levels.
AB - Understanding the thermal properties of piezoelectric thin films is essential in studying the performance and ultimate dissipation limits of bulk acoustic wave resonators. Here, we present the experimental and modeled results of thermal conductivity of the in-demand piezoelectric material aluminum scandium nitride (Al1-xScxN), with x = Sc/(Sc+Al) ratio. We construct the three-dimensional (3D) finite-element modeling (FEM) of a back-side etched thin-film bulk acoustic wave resonator (FBAR) with aluminum nitride (AlN) and Al0.7Sc0.3N thin films. Comparison reveals a 26% more temperature rise in Al0.7Sc0.3N FBAR with equal input surface heat density of 2 W/mm2. The trend is consistent with the drastic decrease of thermal conductivity with increasing x in Al1-xScxN. Consequently, as we study the upper limit of the frequency (f), quality factor (Q) product (f. Q) under phonon interactions, Al1-xScxN exhibits a greater amount of degradation due to self-heating. This work reports the first comparison of thermal properties of AlN and Al1-xScxN resonators, critical in material selection for resonator operation under high power levels.
UR - https://www.scopus.com/pages/publications/85114960545
UR - https://www.scopus.com/pages/publications/85114960545#tab=citedBy
U2 - 10.1109/Transducers50396.2021.9495613
DO - 10.1109/Transducers50396.2021.9495613
M3 - Conference contribution
AN - SCOPUS:85114960545
T3 - 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021
SP - 321
EP - 324
BT - 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 20 June 2021 through 25 June 2021
ER -