Abstract
We report the synthesis of (In,Ga)As/GaAs quantum dots on strain-relaxed (In,Ga)As epitaxial films. It is found that the incorporation of a relaxed prelayer provides a systematic and effective method for controlling the dot distribution and emission wavelength. The robustness of the optical properties of quantum dots to dislocations may provide a method for engineering the band structure of quantum dot devices. We demonstrate, for example, that longer band-to-band emission wavelengths can be obtained by simply decreasing the residual strain in the relaxed films.
Original language | English (US) |
---|---|
Pages (from-to) | 2164-2166 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 73 |
Issue number | 15 |
DOIs | |
State | Published - 1998 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)