Sensing characteristics of in-plane polarized lead zirconate titanate thin films

Baomin Xu; Ronald G. Polcawich; Susan Trolier-Mckinstry; Yaohong Ye; L. Eric Cross; Jonathan J. Bernstein; Raanan Miller

doi:10.1063/1.125575

Sensing characteristics of in-plane polarized lead zirconate titanate thin films

Baomin Xu, Ronald G. Polcawich, Susan Trolier-Mckinstry, Yaohong Ye, L. Eric Cross, Jonathan J. Bernstein, Raanan Miller

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

The sensing characteristics of in-plane polarized lead zirconate titanate (PZT) thin films were studied and compared with the through-thickness polarized PZT films. The in-plane polarized PZT films were deposited on ZrO₂-passivated silicon substrates and had interdigitated electrode systems on the top surface; hence, they can be polarized in the film plane. This in-plane polarization configuration separates the electrode spacing and film thickness as independent variables; thus, the voltage sensitivity can be increased by using wider electrode spacing even for fixed film thickness. The results show that for films with a thickness of 1 μm the voltage sensitivity of in-plane polarized PZT films can be more than 20 times higher than that of the conventional, through-thickness polarized PZT films which were deposited on Pt-buffered silicon substrates.

Original language	English (US)
Pages (from-to)	4180-4182
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	26
DOIs	https://doi.org/10.1063/1.125575
State	Published - 1999

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.125575

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title = "Sensing characteristics of in-plane polarized lead zirconate titanate thin films",

abstract = "The sensing characteristics of in-plane polarized lead zirconate titanate (PZT) thin films were studied and compared with the through-thickness polarized PZT films. The in-plane polarized PZT films were deposited on ZrO2-passivated silicon substrates and had interdigitated electrode systems on the top surface; hence, they can be polarized in the film plane. This in-plane polarization configuration separates the electrode spacing and film thickness as independent variables; thus, the voltage sensitivity can be increased by using wider electrode spacing even for fixed film thickness. The results show that for films with a thickness of 1 μm the voltage sensitivity of in-plane polarized PZT films can be more than 20 times higher than that of the conventional, through-thickness polarized PZT films which were deposited on Pt-buffered silicon substrates.",

author = "Baomin Xu and Polcawich, {Ronald G.} and Susan Trolier-Mckinstry and Yaohong Ye and Cross, {L. Eric} and Bernstein, {Jonathan J.} and Raanan Miller",

year = "1999",

doi = "10.1063/1.125575",

language = "English (US)",

volume = "75",

pages = "4180--4182",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Sensing characteristics of in-plane polarized lead zirconate titanate thin films

AU - Xu, Baomin

AU - Polcawich, Ronald G.

AU - Trolier-Mckinstry, Susan

AU - Ye, Yaohong

AU - Cross, L. Eric

AU - Bernstein, Jonathan J.

AU - Miller, Raanan

PY - 1999

Y1 - 1999

N2 - The sensing characteristics of in-plane polarized lead zirconate titanate (PZT) thin films were studied and compared with the through-thickness polarized PZT films. The in-plane polarized PZT films were deposited on ZrO2-passivated silicon substrates and had interdigitated electrode systems on the top surface; hence, they can be polarized in the film plane. This in-plane polarization configuration separates the electrode spacing and film thickness as independent variables; thus, the voltage sensitivity can be increased by using wider electrode spacing even for fixed film thickness. The results show that for films with a thickness of 1 μm the voltage sensitivity of in-plane polarized PZT films can be more than 20 times higher than that of the conventional, through-thickness polarized PZT films which were deposited on Pt-buffered silicon substrates.

AB - The sensing characteristics of in-plane polarized lead zirconate titanate (PZT) thin films were studied and compared with the through-thickness polarized PZT films. The in-plane polarized PZT films were deposited on ZrO2-passivated silicon substrates and had interdigitated electrode systems on the top surface; hence, they can be polarized in the film plane. This in-plane polarization configuration separates the electrode spacing and film thickness as independent variables; thus, the voltage sensitivity can be increased by using wider electrode spacing even for fixed film thickness. The results show that for films with a thickness of 1 μm the voltage sensitivity of in-plane polarized PZT films can be more than 20 times higher than that of the conventional, through-thickness polarized PZT films which were deposited on Pt-buffered silicon substrates.

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ER -

Sensing characteristics of in-plane polarized lead zirconate titanate thin films

Abstract

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