Abstract
The sensing characteristics of in-plane polarized lead zirconate titanate (PZT) thin films were studied and compared with the through-thickness polarized PZT films. The in-plane polarized PZT films were deposited on ZrO2-passivated silicon substrates and had interdigitated electrode systems on the top surface; hence, they can be polarized in the film plane. This in-plane polarization configuration separates the electrode spacing and film thickness as independent variables; thus, the voltage sensitivity can be increased by using wider electrode spacing even for fixed film thickness. The results show that for films with a thickness of 1 μm the voltage sensitivity of in-plane polarized PZT films can be more than 20 times higher than that of the conventional, through-thickness polarized PZT films which were deposited on Pt-buffered silicon substrates.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 4180-4182 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 75 |
| Issue number | 26 |
| DOIs | |
| State | Published - 1999 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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