Shallow and thermally stable ohmic contacts to p-InAsP

S. H. Wang, E. M. Lysczek, Bangzhi Liu, J. A. Robinson, S. E. Mohney

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We have investigated the electrical and metallurgical behavior of ohmic contacts to p- InAs0.80 P0.20. Auger depth profiling reveals that Ru, Ti, and V have better thermal stability against reaction than Pt, Pd, and Ni on p-InAsP. However, contacts with Pd deposited as the first layer exhibit lower specific contact resistances than contacts with Ti, V, Ni, Ru, or Pt as the first layer. For this reason, multilayer contacts were studied, adding Au as the top layer to minimize the metal sheet resistance. Transmission electron microscopy indicates that PdRuAu contacts aged for 3 days exhibit a uniform and shallow reaction with p-InAsP, with the Pd consuming only 4 nm of the semiconductor and the Ru serving as an effective diffusion barrier. Specific contact resistances of 3.8× 10-6 Ω cm2 as deposited and 1.7× 10-6 Ω cm2 for contacts aged at 250°C for 90 days in an evacuated quartz tube were measured for the PdRuAu contacts.

Original languageEnglish (US)
Pages (from-to)G479-G482
JournalJournal of the Electrochemical Society
Issue number5
StatePublished - 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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