Shallow and thermally stable Pt/W/Au Ohmic contacts to p-type InGaSb

S. H. Wang; J. A. Robinson; S. E. Mohney; B. R. Bennett

doi:10.1116/1.1865119

Shallow and thermally stable Pt/W/Au Ohmic contacts to p-type InGaSb

S. H. Wang, J. A. Robinson, S. E. Mohney, B. R. Bennett

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9 Scopus citations

Abstract

We report a shallow, thermally stable PtWAu (250145 nm) Ohmic contact to p-InGaSb prepared using a brief (N H4) 2 S rinse as part of the premetallization surface treatment. Cross-sectional transmission electron microscopy reveals that the PtWAu contacts have better thermal stability than previously reported PdWAu contacts, with the PtWAu contacts remaining shallow even after they are aged at 250 °C for 3 days. The specific contact resistances of as-deposited PtWAu, PdWAu, CoWAu, CuWAu, WAu, CrWAu, and AgWAu contacts are also compared, and the (N H4) 2 S rinse is found to partially relieve Fermi level pinning at the contactp-InGaSb interface.

Original language	English (US)
Pages (from-to)	293-297
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	23
Issue number	2
DOIs	https://doi.org/10.1116/1.1865119
State	Published - Mar 2005

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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@article{d84fb28fbf29421fa9a55c872b27e2df,

title = "Shallow and thermally stable Pt/W/Au Ohmic contacts to p-type InGaSb",

abstract = "We report a shallow, thermally stable PtWAu (250145 nm) Ohmic contact to p-InGaSb prepared using a brief (N H4) 2 S rinse as part of the premetallization surface treatment. Cross-sectional transmission electron microscopy reveals that the PtWAu contacts have better thermal stability than previously reported PdWAu contacts, with the PtWAu contacts remaining shallow even after they are aged at 250 °C for 3 days. The specific contact resistances of as-deposited PtWAu, PdWAu, CoWAu, CuWAu, WAu, CrWAu, and AgWAu contacts are also compared, and the (N H4) 2 S rinse is found to partially relieve Fermi level pinning at the contactp-InGaSb interface.",

author = "Wang, {S. H.} and Robinson, {J. A.} and Mohney, {S. E.} and Bennett, {B. R.}",

note = "Funding Information: The authors at Penn State gratefully acknowledge the financial support of DARPA through ONR Grant No. N0014-01-1-0790 monitored by M. Rosker (DARPA), C. Wood (ONR), C. Hanson, and D. Mullin (SPAWAR). J. A. Robinson was supported by NDSEG, and the Office of Naval Research supported the work at the NRL.",

year = "2005",

month = mar,

doi = "10.1116/1.1865119",

language = "English (US)",

volume = "23",

pages = "293--297",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "2",

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TY - JOUR

T1 - Shallow and thermally stable Pt/W/Au Ohmic contacts to p-type InGaSb

AU - Wang, S. H.

AU - Robinson, J. A.

AU - Mohney, S. E.

AU - Bennett, B. R.

N1 - Funding Information: The authors at Penn State gratefully acknowledge the financial support of DARPA through ONR Grant No. N0014-01-1-0790 monitored by M. Rosker (DARPA), C. Wood (ONR), C. Hanson, and D. Mullin (SPAWAR). J. A. Robinson was supported by NDSEG, and the Office of Naval Research supported the work at the NRL.

PY - 2005/3

Y1 - 2005/3

N2 - We report a shallow, thermally stable PtWAu (250145 nm) Ohmic contact to p-InGaSb prepared using a brief (N H4) 2 S rinse as part of the premetallization surface treatment. Cross-sectional transmission electron microscopy reveals that the PtWAu contacts have better thermal stability than previously reported PdWAu contacts, with the PtWAu contacts remaining shallow even after they are aged at 250 °C for 3 days. The specific contact resistances of as-deposited PtWAu, PdWAu, CoWAu, CuWAu, WAu, CrWAu, and AgWAu contacts are also compared, and the (N H4) 2 S rinse is found to partially relieve Fermi level pinning at the contactp-InGaSb interface.

AB - We report a shallow, thermally stable PtWAu (250145 nm) Ohmic contact to p-InGaSb prepared using a brief (N H4) 2 S rinse as part of the premetallization surface treatment. Cross-sectional transmission electron microscopy reveals that the PtWAu contacts have better thermal stability than previously reported PdWAu contacts, with the PtWAu contacts remaining shallow even after they are aged at 250 °C for 3 days. The specific contact resistances of as-deposited PtWAu, PdWAu, CoWAu, CuWAu, WAu, CrWAu, and AgWAu contacts are also compared, and the (N H4) 2 S rinse is found to partially relieve Fermi level pinning at the contactp-InGaSb interface.

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SN - 0734-2101

VL - 23

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EP - 297

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 2

ER -

Shallow and thermally stable Pt/W/Au Ohmic contacts to p-type InGaSb

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