Shallow n+ Junctions in Silicon by Arsenic Gas-Phase Doping

J. F. DeGeolormo; D. K. Sodana; D. E. Kotecki; C. M. Ransom; J. Benedict; C. Zeller; C. Graimann; T. N. Jackso

doi:10.1149/1.2054928

Shallow n⁺ Junctions in Silicon by Arsenic Gas-Phase Doping

J. F. DeGeolormo, D. K. Sodana, D. E. Kotecki, C. M. Ransom, J. Benedict, C. Zeller, C. Graimann, T. N. Jackso

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Shallow arsenic junctions were formed in short processing times using gas-phase rapid thermal diffusion with arsine or tertiarybutylarsine (TBA). A 60 s gas-phase diffusion at 1100°C using 3.6% arsine in helium at 760 Torr formed 150 nm junctions with a measured sheet resistance of 100 Ω/□. Shallow junctions were also formed with a 12 min diffusion at 900°C using 10% TBA in argon at 10 Torr. These TBA-formed junctions have arsenic concentration at the silicon surface greater than 1 X 1O²⁰ atms/cm³ and a sheet resistance of 244 Ω/□. In addition, TEM cross sections show no process-induced damage at the junction for gas-phase doping.

Original language	English (US)
Pages (from-to)	1378-1381
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	141
Issue number	5
DOIs	https://doi.org/10.1149/1.2054928
State	Published - 1994

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.2054928

Cite this

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abstract = "Shallow arsenic junctions were formed in short processing times using gas-phase rapid thermal diffusion with arsine or tertiarybutylarsine (TBA). A 60 s gas-phase diffusion at 1100°C using 3.6% arsine in helium at 760 Torr formed 150 nm junctions with a measured sheet resistance of 100 Ω/□. Shallow junctions were also formed with a 12 min diffusion at 900°C using 10% TBA in argon at 10 Torr. These TBA-formed junctions have arsenic concentration at the silicon surface greater than 1 X 1O20 atms/cm3 and a sheet resistance of 244 Ω/□. In addition, TEM cross sections show no process-induced damage at the junction for gas-phase doping.",

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AU - DeGeolormo, J. F.

AU - Sodana, D. K.

AU - Kotecki, D. E.

AU - Ransom, C. M.

AU - Benedict, J.

AU - Zeller, C.

AU - Graimann, C.

AU - Jackso, T. N.

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AB - Shallow arsenic junctions were formed in short processing times using gas-phase rapid thermal diffusion with arsine or tertiarybutylarsine (TBA). A 60 s gas-phase diffusion at 1100°C using 3.6% arsine in helium at 760 Torr formed 150 nm junctions with a measured sheet resistance of 100 Ω/□. Shallow junctions were also formed with a 12 min diffusion at 900°C using 10% TBA in argon at 10 Torr. These TBA-formed junctions have arsenic concentration at the silicon surface greater than 1 X 1O20 atms/cm3 and a sheet resistance of 244 Ω/□. In addition, TEM cross sections show no process-induced damage at the junction for gas-phase doping.

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