Abstract
Shallow arsenic junctions were formed in short processing times using gas-phase rapid thermal diffusion with arsine or tertiarybutylarsine (TBA). A 60 s gas-phase diffusion at 1100°C using 3.6% arsine in helium at 760 Torr formed 150 nm junctions with a measured sheet resistance of 100 Ω/□. Shallow junctions were also formed with a 12 min diffusion at 900°C using 10% TBA in argon at 10 Torr. These TBA-formed junctions have arsenic concentration at the silicon surface greater than 1 X 1O20 atms/cm3 and a sheet resistance of 244 Ω/□. In addition, TEM cross sections show no process-induced damage at the junction for gas-phase doping.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1378-1381 |
| Number of pages | 4 |
| Journal | Journal of the Electrochemical Society |
| Volume | 141 |
| Issue number | 5 |
| DOIs | |
| State | Published - 1994 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
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