Shallow ohmic contacts to p-type InAs

E. M. Lysczek; Suzanne E. Mohney; T. N. Wittberg

doi:10.1049/el:20031154

Shallow ohmic contacts to p-type InAs

E. M. Lysczek, Suzanne E. Mohney, T. N. Wittberg

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A new Pd/Pt/Au ohmic contact to p-InAs provides a lower specific contact resistance as deposited (9.6 × 10^-7 Ω cm²) than Ti-based ohmic contacts prepared on the same epilayer (2.6 × 10^-6 Ω cm² or higher). The effect of the metal deposition method and annealing conditions on the resistance of the contacts is also reported.

Original language	English (US)
Pages (from-to)	1866-1868
Number of pages	3
Journal	Electronics Letters
Volume	39
Issue number	25
DOIs	https://doi.org/10.1049/el:20031154
State	Published - Dec 11 2003

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20031154

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title = "Shallow ohmic contacts to p-type InAs",

abstract = "A new Pd/Pt/Au ohmic contact to p-InAs provides a lower specific contact resistance as deposited (9.6 × 10-7 Ω cm2) than Ti-based ohmic contacts prepared on the same epilayer (2.6 × 10-6 Ω cm2 or higher). The effect of the metal deposition method and annealing conditions on the resistance of the contacts is also reported.",

author = "Lysczek, {E. M.} and Mohney, {Suzanne E.} and Wittberg, {T. N.}",

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T1 - Shallow ohmic contacts to p-type InAs

AU - Lysczek, E. M.

AU - Mohney, Suzanne E.

AU - Wittberg, T. N.

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Y1 - 2003/12/11

N2 - A new Pd/Pt/Au ohmic contact to p-InAs provides a lower specific contact resistance as deposited (9.6 × 10-7 Ω cm2) than Ti-based ohmic contacts prepared on the same epilayer (2.6 × 10-6 Ω cm2 or higher). The effect of the metal deposition method and annealing conditions on the resistance of the contacts is also reported.

AB - A new Pd/Pt/Au ohmic contact to p-InAs provides a lower specific contact resistance as deposited (9.6 × 10-7 Ω cm2) than Ti-based ohmic contacts prepared on the same epilayer (2.6 × 10-6 Ω cm2 or higher). The effect of the metal deposition method and annealing conditions on the resistance of the contacts is also reported.

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SP - 1866

EP - 1868

JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -

Shallow ohmic contacts to p-type InAs

Abstract

All Science Journal Classification (ASJC) codes

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