Shallow ohmic contacts to p-type InAs

E. M. Lysczek, Suzanne E. Mohney, T. N. Wittberg

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


A new Pd/Pt/Au ohmic contact to p-InAs provides a lower specific contact resistance as deposited (9.6 × 10-7 Ω cm2) than Ti-based ohmic contacts prepared on the same epilayer (2.6 × 10-6 Ω cm2 or higher). The effect of the metal deposition method and annealing conditions on the resistance of the contacts is also reported.

Original languageEnglish (US)
Pages (from-to)1866-1868
Number of pages3
JournalElectronics Letters
Issue number25
StatePublished - Dec 11 2003

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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