Short-gate-length epitaxial-channel self-aligned GaAs MESFETs with very large k-factor

T. N. Jackson; G. Pepper; J. F. DeGelormo; T. F. Kuech

Short-gate-length epitaxial-channel self-aligned GaAs MESFETs with very large k-factor

T. N. Jackson, G. Pepper, J. F. DeGelormo, T. F. Kuech

Research output: Contribution to journal › Conference article › peer-review

Abstract

The fabrication of short-gate-length, epitaxial-channel self-aligned GaAs MESFETs with very large k-factor is described. It is shown that devices with gate lengths of less than 0.25 μm can be fabricated with well-controlled short-channel effects. Finally, it is demonstrated that self-aligned devices with gate lengths as short as 50 nm can retain reasonable FET characteristics for operation near maximum transconductance.

Original language	English (US)
Pages (from-to)	507-510
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - Dec 1990
Event	1990 International Electron Devices Meeting - San Francisco, CA, USA Duration: Dec 9 1990 → Dec 12 1990

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Short-gate-length epitaxial-channel self-aligned GaAs MESFETs with very large k-factor",

abstract = "The fabrication of short-gate-length, epitaxial-channel self-aligned GaAs MESFETs with very large k-factor is described. It is shown that devices with gate lengths of less than 0.25 μm can be fabricated with well-controlled short-channel effects. Finally, it is demonstrated that self-aligned devices with gate lengths as short as 50 nm can retain reasonable FET characteristics for operation near maximum transconductance.",

author = "Jackson, {T. N.} and G. Pepper and DeGelormo, {J. F.} and Kuech, {T. F.}",

year = "1990",

month = dec,

language = "English (US)",

pages = "507--510",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1990 International Electron Devices Meeting ; Conference date: 09-12-1990 Through 12-12-1990",

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TY - JOUR

T1 - Short-gate-length epitaxial-channel self-aligned GaAs MESFETs with very large k-factor

AU - Jackson, T. N.

AU - Pepper, G.

AU - DeGelormo, J. F.

AU - Kuech, T. F.

PY - 1990/12

Y1 - 1990/12

N2 - The fabrication of short-gate-length, epitaxial-channel self-aligned GaAs MESFETs with very large k-factor is described. It is shown that devices with gate lengths of less than 0.25 μm can be fabricated with well-controlled short-channel effects. Finally, it is demonstrated that self-aligned devices with gate lengths as short as 50 nm can retain reasonable FET characteristics for operation near maximum transconductance.

AB - The fabrication of short-gate-length, epitaxial-channel self-aligned GaAs MESFETs with very large k-factor is described. It is shown that devices with gate lengths of less than 0.25 μm can be fabricated with well-controlled short-channel effects. Finally, it is demonstrated that self-aligned devices with gate lengths as short as 50 nm can retain reasonable FET characteristics for operation near maximum transconductance.

UR - http://www.scopus.com/inward/record.url?scp=0025575390&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025575390&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0025575390

SN - 0163-1918

SP - 507

EP - 510

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1990 International Electron Devices Meeting

Y2 - 9 December 1990 through 12 December 1990

ER -

Short-gate-length epitaxial-channel self-aligned GaAs MESFETs with very large k-factor

Abstract

All Science Journal Classification (ASJC) codes

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