Si AND GaAs SIS HETEROSTRUCTURE SOLAR CELLS USING SPRAY-DEPOSITED ITO.

P. P. Sharma; T. C. Anthony; S. Ashok; S. J. Fonash; L. L. Tongson

Si AND GaAs SIS HETEROSTRUCTURE SOLAR CELLS USING SPRAY-DEPOSITED ITO.

P. P. Sharma, T. C. Anthony, S. Ashok, S. J. Fonash, L. L. Tongson

Research output: Contribution to conference › Paper › peer-review

Abstract

A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type Si and GaAs using spray-deposited indium-tin oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I-layer have been optimized to yield the following photovoltaic parameters on 1 OMEGA -cm n-Si: V//o//c equals 0. 52 V, J//s//c equals 31. 5 mA/cm**2 (adjusted for Ag grid area), FF equals 0. 70 and effective area n equals 11. 5%. The dark I-V and C-V characteristics have also been evaluated.

Original language	English (US)
Pages	551-555
Number of pages	5
State	Published - 1980

All Science Journal Classification (ASJC) codes

General Engineering

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This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@conference{a18d4101600f4172941afe88fa11b35c,

title = "Si AND GaAs SIS HETEROSTRUCTURE SOLAR CELLS USING SPRAY-DEPOSITED ITO.",

abstract = "A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type Si and GaAs using spray-deposited indium-tin oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I-layer have been optimized to yield the following photovoltaic parameters on 1 OMEGA -cm n-Si: V//o//c equals 0. 52 V, J//s//c equals 31. 5 mA/cm**2 (adjusted for Ag grid area), FF equals 0. 70 and effective area n equals 11. 5%. The dark I-V and C-V characteristics have also been evaluated.",

author = "Sharma, {P. P.} and Anthony, {T. C.} and S. Ashok and Fonash, {S. J.} and Tongson, {L. L.}",

year = "1980",

language = "English (US)",

pages = "551--555",

}

TY - CONF

T1 - Si AND GaAs SIS HETEROSTRUCTURE SOLAR CELLS USING SPRAY-DEPOSITED ITO.

AU - Sharma, P. P.

AU - Anthony, T. C.

AU - Ashok, S.

AU - Fonash, S. J.

AU - Tongson, L. L.

PY - 1980

Y1 - 1980

N2 - A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type Si and GaAs using spray-deposited indium-tin oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I-layer have been optimized to yield the following photovoltaic parameters on 1 OMEGA -cm n-Si: V//o//c equals 0. 52 V, J//s//c equals 31. 5 mA/cm**2 (adjusted for Ag grid area), FF equals 0. 70 and effective area n equals 11. 5%. The dark I-V and C-V characteristics have also been evaluated.

AB - A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type Si and GaAs using spray-deposited indium-tin oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I-layer have been optimized to yield the following photovoltaic parameters on 1 OMEGA -cm n-Si: V//o//c equals 0. 52 V, J//s//c equals 31. 5 mA/cm**2 (adjusted for Ag grid area), FF equals 0. 70 and effective area n equals 11. 5%. The dark I-V and C-V characteristics have also been evaluated.

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UR - http://www.scopus.com/inward/citedby.url?scp=0019269504&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0019269504

SP - 551

EP - 555

ER -

Si AND GaAs SIS HETEROSTRUCTURE SOLAR CELLS USING SPRAY-DEPOSITED ITO.

Abstract

All Science Journal Classification (ASJC) codes

UN SDGs

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