Si and GaAs SIS heterostructure solar cells using spray-deposited ITO

P. P. Sharma; T. C. Anthony; S. Ashok; S. J. Fonash; L. L. Tongson

doi:10.7567/JJAPS.19S1.551

Si and GaAs SIS heterostructure solar cells using spray-deposited ITO

P. P. Sharma
, T. C. Anthony
, S. Ashok
, S. J. Fonash
, L. L. Tongson

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type Si and GaAs using spray-deposited indium-tin oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I-layer have been optimized to yield the following photovoltaic parameters on 1 Ω-cm n-Si: V_oc=0.52 V, J_sc=31.5 mA/cm²(adjusted for Ag grid area), FF=0.70 and effective area η=11.5%. The dark I-V and C-V characteristics have also been evaluated to identify the mechanisms of barrier formation and current flow.

Original language	English (US)
Pages (from-to)	551-556
Number of pages	6
Journal	Japanese Journal of Applied Physics
Volume	19
DOIs	https://doi.org/10.7567/JJAPS.19S1.551
State	Published - Jan 1980

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.7567/JJAPS.19S1.551

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@article{cf555f81b1844056aae2478354a1215b,

title = "Si and GaAs SIS heterostructure solar cells using spray-deposited ITO",

abstract = "A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type Si and GaAs using spray-deposited indium-tin oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I-layer have been optimized to yield the following photovoltaic parameters on 1 Ω-cm n-Si: Voc=0.52 V, Jsc=31.5 mA/cm2(adjusted for Ag grid area), FF=0.70 and effective area η=11.5\%. The dark I-V and C-V characteristics have also been evaluated to identify the mechanisms of barrier formation and current flow.",

author = "Sharma, \{P. P.\} and Anthony, \{T. C.\} and S. Ashok and Fonash, \{S. J.\} and Tongson, \{L. L.\}",

year = "1980",

month = jan,

doi = "10.7567/JJAPS.19S1.551",

language = "English (US)",

volume = "19",

pages = "551--556",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

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TY - JOUR

T1 - Si and GaAs SIS heterostructure solar cells using spray-deposited ITO

AU - Sharma, P. P.

AU - Anthony, T. C.

AU - Ashok, S.

AU - Fonash, S. J.

AU - Tongson, L. L.

PY - 1980/1

Y1 - 1980/1

N2 - A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type Si and GaAs using spray-deposited indium-tin oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I-layer have been optimized to yield the following photovoltaic parameters on 1 Ω-cm n-Si: Voc=0.52 V, Jsc=31.5 mA/cm2(adjusted for Ag grid area), FF=0.70 and effective area η=11.5%. The dark I-V and C-V characteristics have also been evaluated to identify the mechanisms of barrier formation and current flow.

AB - A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type Si and GaAs using spray-deposited indium-tin oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I-layer have been optimized to yield the following photovoltaic parameters on 1 Ω-cm n-Si: Voc=0.52 V, Jsc=31.5 mA/cm2(adjusted for Ag grid area), FF=0.70 and effective area η=11.5%. The dark I-V and C-V characteristics have also been evaluated to identify the mechanisms of barrier formation and current flow.

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UR - https://www.scopus.com/pages/publications/0345589814#tab=citedBy

U2 - 10.7567/JJAPS.19S1.551

DO - 10.7567/JJAPS.19S1.551

M3 - Article

AN - SCOPUS:0345589814

SN - 0021-4922

VL - 19

SP - 551

EP - 556

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

ER -

Si and GaAs SIS heterostructure solar cells using spray-deposited ITO

Abstract

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