Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

Won Hyuck Choi, Guanjun You, Michael Abraham, Shih Ying Yu, Jie Liu, Li Wang, Jian Xu, Suzanne E. Mohney

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Original languageEnglish (US)
Article number013103
JournalJournal of Applied Physics
Issue number1
StatePublished - Jul 7 2014

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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