Abstract
We report the fabrication of organic thin-film transistors (OTFTs) with high-k gate dielectrics of Mn-doped Bi 2Ti 2O 7 (BTO) films. 3% Mn-doped BTO films deposited on polymer substrates by pulsed laser deposition at room temperature exhibit low leakage currents of 2.1 × 10 -8 A/cm 2 at an applied electric field of 0.3 MV/cm, while undoped BTO films show much higher leakage currents of 4.3 × 10 -4 A/cm 2. Mn doping effectively reduces the number of oxygen vacancies in the films and improves the electrical properties. Low operation voltage and significantly reduced leakage currents are demonstrated in pentacene-based OTFTs with the Mn-doped BTO gate dielectrics. (
Original language | English (US) |
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Pages (from-to) | 208-210 |
Number of pages | 3 |
Journal | Physica Status Solidi - Rapid Research Letters |
Volume | 6 |
Issue number | 5 |
DOIs | |
State | Published - May 2012 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics