Significantly reduced leakage currents in organic thin film transistors with Mn-doped Bi ₂Ti ₂O ₇ high-k gate dielectrics

We report the fabrication of organic thin-film transistors (OTFTs) with high-k gate dielectrics of Mn-doped Bi ₂Ti ₂O ₇ (BTO) films. 3% Mn-doped BTO films deposited on polymer substrates by pulsed laser deposition at room temperature exhibit low leakage currents of 2.1 × 10 ^-8 A/cm ² at an applied electric field of 0.3 MV/cm, while undoped BTO films show much higher leakage currents of 4.3 × 10 ^-4 A/cm ². Mn doping effectively reduces the number of oxygen vacancies in the films and improves the electrical properties. Low operation voltage and significantly reduced leakage currents are demonstrated in pentacene-based OTFTs with the Mn-doped BTO gate dielectrics. (