Abstract
A codeposited layer of silicon and a metal that is reactive to Ga and a dopant of GaAs will serve as an improved ohmic contact to GaAs. An example is a coevaporated or cosputtered layer of Si and Pd. The layer is deposited on (100) or (110) oriented GaAs and is stable between 350 degree C and 500 degree C. Advantages are outlined.
| Original language | English (US) |
|---|---|
| Number of pages | 1 |
| Journal | IBM technical disclosure bulletin |
| Volume | 27 |
| Issue number | 9 |
| State | Published - Feb 1 1985 |
All Science Journal Classification (ASJC) codes
- General Engineering
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