Silicon micromachining and its impact on materials and device properties: plasma etching damage issues

Keyphrases

• Magnetic Field 100%
• Material Properties 100%
• Spectroscopic Ellipsometry 100%
• Plasma Etching 100%
• Silicon Micromachining 100%
• Etching Damage 100%
• Device Property 100%
• Secondary Ion Mass Spectrometry 66%
• Reactive Ion Etching 66%
• Si Surface 66%
• Micro-electro-mechanical Systems 66%
• Oxides 33%
• Processing Stages 33%
• Device Performance 33%
• Plasma Exposure 33%
• Current-voltage 33%
• Schottky Diode 33%
• Amorphous Si 33%
• Fluorocarbon 33%
• Damaged Layer 33%
• Damage Effect 33%
• Miniaturized Device 33%
• Residual Polymer 33%
• Sub-micron Structure 33%
• Diode Current 33%
• Polymer Residue 33%
• Residue Layer 33%
• Micromachining Technique 33%
• IC Technology 33%

Material Science

• Silicon 100%
• Micromachining 100%
• Plasma Etching 100%
• Secondary Ion Mass Spectrometry 50%
• Microelectromechanical System 50%
• Reactive Ion Etching 50%
• Density 25%
• Oxide Compound 25%
• Amorphous Material 25%
• Schottky Diode 25%

Engineering

• Magnetic Field 100%
• Micro Machining 100%
• Plasma Property 100%
• Microelectromechanical System 66%
• Si Surface 66%
• Device Performance 33%
• Thin Layer 33%
• Processing Step 33%