Silicon nanocrystals synthesized by electron-beam co-evaporation method and their application for nonvolatile memory

Chen Chen, Rui Jia, Ming Liu, Wei Long Li, Chen Xin Zhu, Hao Feng Li, Pei Wen Zhang, Chang Qing Xie, Qin Wang, Tian Chun Ye

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Silicon nanocrystals designed for nonvolatile memory applications are for the first time prepared by electron beam co-evaporation of Si and SiO 2 hybrid. Transmission electron microscopy observation and Raman scattering certify the formation of Si NCs. Metal-oxide-semiconductor capacitor structures with Si NCs embedded in the gate oxide are fabricated to characterize the memory behavior. High-frequency capacitance-voltage and capacitance-time measurements demonstrate the memory behavior of the structure resulting from the charging/discharging behaviors of Si NCs. It is found that the flatband voltage can be changed by adjusting the concentration of Si and SiO2 in the hybrids. The Si nanocrystals memory device has yielded good retention characteristics with small charge loss.

Original languageEnglish (US)
Title of host publicationECS Transactions - ISTC/CSTIC 2009 (CISTC)
Pages93-98
Number of pages6
Edition1 PART 1
DOIs
StatePublished - 2009
EventISTC/CSTIC 2009 (CISTC) - Shanghai, China
Duration: Mar 19 2009Mar 20 2009

Publication series

NameECS Transactions
Number1 PART 1
Volume18
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherISTC/CSTIC 2009 (CISTC)
Country/TerritoryChina
CityShanghai
Period3/19/093/20/09

All Science Journal Classification (ASJC) codes

  • General Engineering

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