Silicon nanowires: Doping dependent n- and p- channel FET behavior

Kumhyo Byon, John E. Fischer, Kofi W. Adu, Peter C. Eklund

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


The electrical transport properties of field effect transistor (FET) devices made of silicon nanowires (SiNWs) synthesized by pulsed laser vaporization (PLV) were studied. From as-grown PLV-SiNW FET, we found p-channel FET behavior with low conductance. To improve conductance, spin on glass (SOG) and vapor doping were used to dope phosphorus and indium into SiNW, respectively. From doping after synthesis, we could successfully make both n- and p-channel FET devices.

Original languageEnglish (US)
Article numberF9.9
Pages (from-to)281-286
Number of pages6
JournalMaterials Research Society Symposium Proceedings
StatePublished - 2005
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2004Dec 2 2004

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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