Abstract
The electrical transport properties of field effect transistor (FET) devices made of silicon nanowires (SiNWs) synthesized by pulsed laser vaporization (PLV) were studied. From as-grown PLV-SiNW FET, we found p-channel FET behavior with low conductance. To improve conductance, spin on glass (SOG) and vapor doping were used to dope phosphorus and indium into SiNW, respectively. From doping after synthesis, we could successfully make both n- and p-channel FET devices.
| Original language | English (US) |
|---|---|
| Article number | F9.9 |
| Pages (from-to) | 281-286 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 832 |
| State | Published - Aug 25 2005 |
| Event | 2004 MRS Fall Meeting - Boston, MA, United States Duration: Nov 29 2004 → Dec 2 2004 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering