Silicon Schottky-Barrier Modification by IonImplantation Damage

S. Ashok, A. Mogro-Campero

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


Low-energy (5-keV) high-dose (1015 cm–2) argon implantation has been carried out on n- and p-type silicon to confirm the role of ion damage on the characteristics of subsequently formed Schottky barrier diodes. The electrical behavior of the diodes is similar to that observed recently on inert-gas ion-etched and reactive-ion-etched silicon surfaces, thus unambiguously attributing the Schottky-barrier modification to ion-induced surface damage.

Original languageEnglish (US)
Pages (from-to)48-49
Number of pages2
JournalIEEE Electron Device Letters
Issue number2
StatePublished - Feb 1984

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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