Silicon Schottky-Barrier Modification by IonImplantation Damage

S. Ashok; A. Mogro-Campero

doi:10.1109/EDL.1984.25828

Silicon Schottky-Barrier Modification by IonImplantation Damage

S. Ashok, A. Mogro-Campero

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Abstract

Low-energy (5-keV) high-dose (10¹⁵ cm^–2) argon implantation has been carried out on n- and p-type silicon to confirm the role of ion damage on the characteristics of subsequently formed Schottky barrier diodes. The electrical behavior of the diodes is similar to that observed recently on inert-gas ion-etched and reactive-ion-etched silicon surfaces, thus unambiguously attributing the Schottky-barrier modification to ion-induced surface damage.

Original language	English (US)
Pages (from-to)	48-49
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	5
Issue number	2
DOIs	https://doi.org/10.1109/EDL.1984.25828
State	Published - Feb 1984

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1984.25828

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abstract = "Low-energy (5-keV) high-dose (1015 cm–2) argon implantation has been carried out on n- and p-type silicon to confirm the role of ion damage on the characteristics of subsequently formed Schottky barrier diodes. The electrical behavior of the diodes is similar to that observed recently on inert-gas ion-etched and reactive-ion-etched silicon surfaces, thus unambiguously attributing the Schottky-barrier modification to ion-induced surface damage.",

author = "S. Ashok and A. Mogro-Campero",

year = "1984",

month = feb,

doi = "10.1109/EDL.1984.25828",

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AU - Mogro-Campero, A.

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AB - Low-energy (5-keV) high-dose (1015 cm–2) argon implantation has been carried out on n- and p-type silicon to confirm the role of ion damage on the characteristics of subsequently formed Schottky barrier diodes. The electrical behavior of the diodes is similar to that observed recently on inert-gas ion-etched and reactive-ion-etched silicon surfaces, thus unambiguously attributing the Schottky-barrier modification to ion-induced surface damage.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Silicon Schottky-Barrier Modification by IonImplantation Damage

Abstract

All Science Journal Classification (ASJC) codes

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