SILICON SCHOTTKY BARRIER MODIFICATION BY LOW ENERGY NITROGEN ION IMPLANTATION.

The application of thin silicon nitride and oxynitride dielectric films as passivant and gate dielectric in VLSI has stimulated interest in the bulk and interfacial properties of these films. In this investigation, Si:N films were formed on both n- and p-Si by low-energy ion implantation in an ion beam sputtering system to yield films of thickness 35-50 A. The influence of these thin insulating films as well as the process of forming them on subsequently fabricated MIS Schottky diodes was studied systematically and definite trends observed on both surface barrier formation and carrier transport.