Abstract
The influence of ultrathin (≲5 nm) amorphous silicon nitride films formed by low-energy (200–600 eV) nitrogen ion implantation into silicon on the electrical characteristics of metal-Si contacts has been studied. The interface characteristics are determined by both the growth of the nitride layer due to the implantation and the modification of the Si band bending as a result of the ion bombardment damage. It is found that the barrier formation and carrier transport mechanisms are considerably more complex than in other schemes of barrier control. A definite correlation between the electrical properties and implant energy is observed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1494-1499 |
| Number of pages | 6 |
| Journal | Journal of the Electrochemical Society |
| Volume | 134 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 1987 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Surfaces, Coatings and Films
- Electrochemistry
- Renewable Energy, Sustainability and the Environment
