Silicon surface barrier modification by low-energy nitrogen ion implantation

S. A. Ringel, S. Ashok

Research output: Contribution to journalArticlepeer-review

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The influence of ultrathin (≲5 nm) amorphous silicon nitride films formed by low-energy (200–600 eV) nitrogen ion implantation into silicon on the electrical characteristics of metal-Si contacts has been studied. The interface characteristics are determined by both the growth of the nitride layer due to the implantation and the modification of the Si band bending as a result of the ion bombardment damage. It is found that the barrier formation and carrier transport mechanisms are considerably more complex than in other schemes of barrier control. A definite correlation between the electrical properties and implant energy is observed.

Original languageEnglish (US)
Pages (from-to)1494-1499
Number of pages6
JournalJournal of the Electrochemical Society
Issue number6
StatePublished - Jun 1987

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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