Simultaneous Large Mode Index and High Quality Factor in Infrared Hyperbolic Metamaterials

Patrick Sohr; Dongxia Wei; Stephanie Tomasulo; Michael K. Yakes; Stephanie Law

doi:10.1021/acsphotonics.8b01097

Simultaneous Large Mode Index and High Quality Factor in Infrared Hyperbolic Metamaterials

Patrick Sohr, Dongxia Wei, Stephanie Tomasulo, Michael K. Yakes, Stephanie Law

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Semiconductor hyperbolic metamaterials comprise alternating doped (metal) and undoped (dielectric) subwavelength semiconductor layers. These materials support high wavevector modes called volume plasmon polaritons. Here, we investigate the quality and modal indices of volume plasmon polaritons in three semiconductor systems: Si:InGaAs/InAlAs, Si:InAs/GaSb, and Si:InAs/AlSb. We are able to demonstrate modal indices as high as 15, which is higher than any other artificial hyperbolic metamaterial within its respective wavelength range. We achieve this while maintaining quality factors as high as 14, comparable to those same material systems. Understanding of how the material combinations of these semiconductor hyperbolic metamaterials affect the volume plasmon polaritons provides the groundwork for the development of tunable, low-loss, infrared optoelectronic devices.

Original language	English (US)
Pages (from-to)	4003-4008
Number of pages	6
Journal	ACS Photonics
Volume	5
Issue number	10
DOIs	https://doi.org/10.1021/acsphotonics.8b01097
State	Published - Oct 17 2018

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Biotechnology
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1021/acsphotonics.8b01097

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title = "Simultaneous Large Mode Index and High Quality Factor in Infrared Hyperbolic Metamaterials",

abstract = "Semiconductor hyperbolic metamaterials comprise alternating doped (metal) and undoped (dielectric) subwavelength semiconductor layers. These materials support high wavevector modes called volume plasmon polaritons. Here, we investigate the quality and modal indices of volume plasmon polaritons in three semiconductor systems: Si:InGaAs/InAlAs, Si:InAs/GaSb, and Si:InAs/AlSb. We are able to demonstrate modal indices as high as 15, which is higher than any other artificial hyperbolic metamaterial within its respective wavelength range. We achieve this while maintaining quality factors as high as 14, comparable to those same material systems. Understanding of how the material combinations of these semiconductor hyperbolic metamaterials affect the volume plasmon polaritons provides the groundwork for the development of tunable, low-loss, infrared optoelectronic devices.",

author = "Patrick Sohr and Dongxia Wei and Stephanie Tomasulo and Yakes, {Michael K.} and Stephanie Law",

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AU - Sohr, Patrick

AU - Wei, Dongxia

AU - Tomasulo, Stephanie

AU - Yakes, Michael K.

AU - Law, Stephanie

PY - 2018/10/17

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N2 - Semiconductor hyperbolic metamaterials comprise alternating doped (metal) and undoped (dielectric) subwavelength semiconductor layers. These materials support high wavevector modes called volume plasmon polaritons. Here, we investigate the quality and modal indices of volume plasmon polaritons in three semiconductor systems: Si:InGaAs/InAlAs, Si:InAs/GaSb, and Si:InAs/AlSb. We are able to demonstrate modal indices as high as 15, which is higher than any other artificial hyperbolic metamaterial within its respective wavelength range. We achieve this while maintaining quality factors as high as 14, comparable to those same material systems. Understanding of how the material combinations of these semiconductor hyperbolic metamaterials affect the volume plasmon polaritons provides the groundwork for the development of tunable, low-loss, infrared optoelectronic devices.

AB - Semiconductor hyperbolic metamaterials comprise alternating doped (metal) and undoped (dielectric) subwavelength semiconductor layers. These materials support high wavevector modes called volume plasmon polaritons. Here, we investigate the quality and modal indices of volume plasmon polaritons in three semiconductor systems: Si:InGaAs/InAlAs, Si:InAs/GaSb, and Si:InAs/AlSb. We are able to demonstrate modal indices as high as 15, which is higher than any other artificial hyperbolic metamaterial within its respective wavelength range. We achieve this while maintaining quality factors as high as 14, comparable to those same material systems. Understanding of how the material combinations of these semiconductor hyperbolic metamaterials affect the volume plasmon polaritons provides the groundwork for the development of tunable, low-loss, infrared optoelectronic devices.

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Simultaneous Large Mode Index and High Quality Factor in Infrared Hyperbolic Metamaterials

Abstract

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