Single-Carrier Space-Charge Controlled Conduction vs. Ballistic Transport in GaAs Devices at 77° K

P. E. Schmidt; M. Octavio; P. D. Esqueda

doi:10.1109/EDL.1981.25403

Single-Carrier Space-Charge Controlled Conduction vs. Ballistic Transport in GaAs Devices at 77° K

P. E. Schmidt
, M. Octavio
, P. D. Esqueda

Penn State Berks

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Single-carrier space-charge controlled in n⁺ n n⁺ GaAs structures at 77° K have been studied. The calculated current-voltage relationships are compared with the ones obtained from the “ballistic” transport theory.

Original language	English (US)
Pages (from-to)	205-207
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	2
Issue number	8
DOIs	https://doi.org/10.1109/EDL.1981.25403
State	Published - Aug 1981

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1981.25403

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title = "Single-Carrier Space-Charge Controlled Conduction vs. Ballistic Transport in GaAs Devices at 77° K",

abstract = "Single-carrier space-charge controlled in n+ n n+ GaAs structures at 77° K have been studied. The calculated current-voltage relationships are compared with the ones obtained from the “ballistic” transport theory.",

author = "Schmidt, \{P. E.\} and M. Octavio and Esqueda, \{P. D.\}",

year = "1981",

month = aug,

doi = "10.1109/EDL.1981.25403",

language = "English (US)",

volume = "2",

pages = "205--207",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

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AU - Schmidt, P. E.

AU - Octavio, M.

AU - Esqueda, P. D.

PY - 1981/8

Y1 - 1981/8

N2 - Single-carrier space-charge controlled in n+ n n+ GaAs structures at 77° K have been studied. The calculated current-voltage relationships are compared with the ones obtained from the “ballistic” transport theory.

AB - Single-carrier space-charge controlled in n+ n n+ GaAs structures at 77° K have been studied. The calculated current-voltage relationships are compared with the ones obtained from the “ballistic” transport theory.

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UR - https://www.scopus.com/pages/publications/0019601718#tab=citedBy

U2 - 10.1109/EDL.1981.25403

DO - 10.1109/EDL.1981.25403

M3 - Article

AN - SCOPUS:0019601718

SN - 0741-3106

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EP - 207

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

ER -

Single-Carrier Space-Charge Controlled Conduction vs. Ballistic Transport in GaAs Devices at 77° K

Abstract

All Science Journal Classification (ASJC) codes

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