@inproceedings{f9e2820df42c45968b79fc378d3d2096,
title = "Single Crystalline ScAlN Surface Acoustic Wave Resonators with Large Figure of Merit (Q × k)",
abstract = "Surface acoustic wave (SAW) resonators based on single crystalline aluminum nitride (AlN) and scandium aluminum nitride (ScAlN) grown by molecular beam epitaxy (MBE) demonstrated substantial improvement in acoustic performance compared to the state-of-art devices with sputtered piezoelectric layers on silicon substrates. High coupling coefficient \left( {k-t^2} \right) up to 5.0% and 7.8% were found in resonators with AlN and ScAlN device layers, respectively, due to better crystallinity and scandium doping. This resulted in high figure of merits \left( {Q \times k-t^2} \right) among SAW devices on silicon up to 5.4, which is about twice larger than the previous work using sputtered ScAlN on silicon and comparable to those on non-silicon substrates.",
author = "Zhijian Hao and Mingyo Park and Kim, {Dea Gyu} and Andrew Clark and Rytis Dargis and Haoshen Zhu and Azadeh Ansari",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE MTT-S International Microwave Symposium, IMS 2019 ; Conference date: 02-06-2019 Through 07-06-2019",
year = "2019",
month = jun,
doi = "10.1109/mwsym.2019.8700824",
language = "English (US)",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "786--789",
booktitle = "2019 IEEE MTT-S International Microwave Symposium, IMS 2019",
address = "United States",
}