Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFET's

L. Trabzon; O. O. Awadelkarim; J. Werking; G. Bersuker; Y. D. Chan

doi:10.1109/55.545773

Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFET's

L. Trabzon, O. O. Awadelkarim, J. Werking, G. Bersuker, Y. D. Chan

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Sinusoidal ac signals are applied to 90-Å thick gateoxide in 0.5-μm n-MOSFET's. The objective is to emulate ac stressing to devices, recently reported to occur during plasma processes. AC stressing is found to be more damaging to the oxide and oxide/silicon interface when compared to de stressing. The damage induced by the ac stress is observed to depend on the signals frequency and amplitude. It is proposed that carrier hopping is primarily responsible for oxide current and device damage observed following the ac stress. This hopping current is insignificant during high-field dc stress. when Fowler-Nordheim tunneling becomes the dominant conduction mechanism.

Original language	English (US)
Pages (from-to)	569-571
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	12
DOIs	https://doi.org/10.1109/55.545773
State	Published - Dec 1996

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/55.545773

Cite this

@article{d135f82d5512491ea751edab11896323,

title = "Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFET's",

abstract = "Sinusoidal ac signals are applied to 90-{\AA} thick gateoxide in 0.5-μm n-MOSFET's. The objective is to emulate ac stressing to devices, recently reported to occur during plasma processes. AC stressing is found to be more damaging to the oxide and oxide/silicon interface when compared to de stressing. The damage induced by the ac stress is observed to depend on the signals frequency and amplitude. It is proposed that carrier hopping is primarily responsible for oxide current and device damage observed following the ac stress. This hopping current is insignificant during high-field dc stress. when Fowler-Nordheim tunneling becomes the dominant conduction mechanism.",

author = "L. Trabzon and Awadelkarim, {O. O.} and J. Werking and G. Bersuker and Chan, {Y. D.}",

year = "1996",

month = dec,

doi = "10.1109/55.545773",

language = "English (US)",

volume = "17",

pages = "569--571",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFET's

AU - Trabzon, L.

AU - Awadelkarim, O. O.

AU - Werking, J.

AU - Bersuker, G.

AU - Chan, Y. D.

PY - 1996/12

Y1 - 1996/12

N2 - Sinusoidal ac signals are applied to 90-Å thick gateoxide in 0.5-μm n-MOSFET's. The objective is to emulate ac stressing to devices, recently reported to occur during plasma processes. AC stressing is found to be more damaging to the oxide and oxide/silicon interface when compared to de stressing. The damage induced by the ac stress is observed to depend on the signals frequency and amplitude. It is proposed that carrier hopping is primarily responsible for oxide current and device damage observed following the ac stress. This hopping current is insignificant during high-field dc stress. when Fowler-Nordheim tunneling becomes the dominant conduction mechanism.

AB - Sinusoidal ac signals are applied to 90-Å thick gateoxide in 0.5-μm n-MOSFET's. The objective is to emulate ac stressing to devices, recently reported to occur during plasma processes. AC stressing is found to be more damaging to the oxide and oxide/silicon interface when compared to de stressing. The damage induced by the ac stress is observed to depend on the signals frequency and amplitude. It is proposed that carrier hopping is primarily responsible for oxide current and device damage observed following the ac stress. This hopping current is insignificant during high-field dc stress. when Fowler-Nordheim tunneling becomes the dominant conduction mechanism.

UR - http://www.scopus.com/inward/record.url?scp=0030410025&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030410025&partnerID=8YFLogxK

U2 - 10.1109/55.545773

DO - 10.1109/55.545773

M3 - Article

AN - SCOPUS:0030410025

SN - 0741-3106

VL - 17

SP - 569

EP - 571

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

ER -

Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFET's

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this