SiO2 thickness determination by X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry

D. A. Cole; J. R. Shallenberger; S. W. Novak; R. L. Moore; M. J. Edgell; S. P. Smith; C. J. Hitzman; J. F. Kirchhoff; E. Principe; W. Nieveen; F. K. Huang; S. Biswas; R. J. Bleiler; K. Jones

doi:10.1116/1.591208

SiO₂ thickness determination by X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry

D. A. Cole
, J. R. Shallenberger
, S. W. Novak
, R. L. Moore
, M. J. Edgell
, S. P. Smith
, C. J. Hitzman
, J. F. Kirchhoff
, E. Principe
, W. Nieveen
, F. K. Huang
, S. Biswas
, R. J. Bleiler
, K. Jones

Materials Characterization Lab

Research output: Contribution to journal › Article › peer-review

86 Scopus citations

Abstract

The need for accurate and precise SiO₂ thickness measurements is becoming ever more crucial. A number of analytical techniques capable of measuring thickness below 10 nm are available. Six of these techniques, namely X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and spectroscopic ellipsometry are compared and contrasted to determine their relative strengths and weaknesses.

Original language	English (US)
Pages (from-to)	440-444
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	1
DOIs	https://doi.org/10.1116/1.591208
State	Published - Jan 2000

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.591208

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Cole, D. A., Shallenberger, J. R., Novak, S. W., Moore, R. L., Edgell, M. J., Smith, S. P., Hitzman, C. J., Kirchhoff, J. F., Principe, E., Nieveen, W., Huang, F. K., Biswas, S., Bleiler, R. J., & Jones, K. (2000). SiO₂ thickness determination by X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 18(1), 440-444. https://doi.org/10.1116/1.591208

Cole, D. A. ; Shallenberger, J. R. ; Novak, S. W. et al. / SiO₂ thickness determination by X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2000 ; Vol. 18, No. 1. pp. 440-444.

@article{ca7c755b942b427a8e8508fe570bdbd6,

title = "SiO2 thickness determination by X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry",

abstract = "The need for accurate and precise SiO2 thickness measurements is becoming ever more crucial. A number of analytical techniques capable of measuring thickness below 10 nm are available. Six of these techniques, namely X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and spectroscopic ellipsometry are compared and contrasted to determine their relative strengths and weaknesses.",

author = "Cole, \{D. A.\} and Shallenberger, \{J. R.\} and Novak, \{S. W.\} and Moore, \{R. L.\} and Edgell, \{M. J.\} and Smith, \{S. P.\} and Hitzman, \{C. J.\} and Kirchhoff, \{J. F.\} and E. Principe and W. Nieveen and Huang, \{F. K.\} and S. Biswas and Bleiler, \{R. J.\} and K. Jones",

year = "2000",

month = jan,

doi = "10.1116/1.591208",

language = "English (US)",

volume = "18",

pages = "440--444",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "1",

}

Cole, DA, Shallenberger, JR, Novak, SW, Moore, RL, Edgell, MJ, Smith, SP, Hitzman, CJ, Kirchhoff, JF, Principe, E, Nieveen, W, Huang, FK, Biswas, S, Bleiler, RJ & Jones, K 2000, 'SiO₂ thickness determination by X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 18, no. 1, pp. 440-444. https://doi.org/10.1116/1.591208

SiO₂ thickness determination by X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry. / Cole, D. A.; Shallenberger, J. R.; Novak, S. W. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 1, 01.2000, p. 440-444.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - SiO2 thickness determination by X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry

AU - Cole, D. A.

AU - Shallenberger, J. R.

AU - Novak, S. W.

AU - Moore, R. L.

AU - Edgell, M. J.

AU - Smith, S. P.

AU - Hitzman, C. J.

AU - Kirchhoff, J. F.

AU - Principe, E.

AU - Nieveen, W.

AU - Huang, F. K.

AU - Biswas, S.

AU - Bleiler, R. J.

AU - Jones, K.

PY - 2000/1

Y1 - 2000/1

N2 - The need for accurate and precise SiO2 thickness measurements is becoming ever more crucial. A number of analytical techniques capable of measuring thickness below 10 nm are available. Six of these techniques, namely X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and spectroscopic ellipsometry are compared and contrasted to determine their relative strengths and weaknesses.

AB - The need for accurate and precise SiO2 thickness measurements is becoming ever more crucial. A number of analytical techniques capable of measuring thickness below 10 nm are available. Six of these techniques, namely X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and spectroscopic ellipsometry are compared and contrasted to determine their relative strengths and weaknesses.

UR - https://www.scopus.com/pages/publications/0034350496

UR - https://www.scopus.com/pages/publications/0034350496#tab=citedBy

U2 - 10.1116/1.591208

DO - 10.1116/1.591208

M3 - Article

AN - SCOPUS:0034350496

SN - 1071-1023

VL - 18

SP - 440

EP - 444

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1

ER -

Cole DA, Shallenberger JR, Novak SW, Moore RL, Edgell MJ, Smith SP et al. SiO₂ thickness determination by X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2000 Jan;18(1):440-444. doi: 10.1116/1.591208