Abstract
Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.8Ge0.2 n-type substrate, which demonstrate negative differential resistance at 298 K. Peak current densities of 5 kA/cm2 with peak-to-valley current ratios of 1.1 have been achieved. Theoretical modeling of the structure demonstrates that the major current peak results from the tunneling of light-mass electrons from the relaxed substrate and not from the heavy-mass electrons in the emitter accumulation layer.
Original language | English (US) |
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Pages (from-to) | 1653-1655 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 77 |
Issue number | 11 |
DOIs | |
State | Published - Sep 11 2000 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)