Si/SiGe electron resonant tunneling diodes

D. J. Paul; P. See; I. V. Zozoulenko; K. F. Berggren; B. Kabius; B. Holländer; S. Mantl

doi:10.1063/1.1309020

Si/SiGe electron resonant tunneling diodes

D. J. Paul, P. See, I. V. Zozoulenko, K. F. Berggren, B. Kabius, B. Holländer, S. Mantl

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si_0.4Ge_0.6 barriers on a relaxed Si_0.8Ge_0.2 n-type substrate, which demonstrate negative differential resistance at 298 K. Peak current densities of 5 kA/cm² with peak-to-valley current ratios of 1.1 have been achieved. Theoretical modeling of the structure demonstrates that the major current peak results from the tunneling of light-mass electrons from the relaxed substrate and not from the heavy-mass electrons in the emitter accumulation layer.

Original language	English (US)
Pages (from-to)	1653-1655
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	11
DOIs	https://doi.org/10.1063/1.1309020
State	Published - Sep 11 2000

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1309020

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title = "Si/SiGe electron resonant tunneling diodes",

abstract = "Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.8Ge0.2 n-type substrate, which demonstrate negative differential resistance at 298 K. Peak current densities of 5 kA/cm2 with peak-to-valley current ratios of 1.1 have been achieved. Theoretical modeling of the structure demonstrates that the major current peak results from the tunneling of light-mass electrons from the relaxed substrate and not from the heavy-mass electrons in the emitter accumulation layer.",

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language = "English (US)",

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T1 - Si/SiGe electron resonant tunneling diodes

AU - Paul, D. J.

AU - See, P.

AU - Zozoulenko, I. V.

AU - Berggren, K. F.

AU - Kabius, B.

AU - Holländer, B.

AU - Mantl, S.

PY - 2000/9/11

Y1 - 2000/9/11

N2 - Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.8Ge0.2 n-type substrate, which demonstrate negative differential resistance at 298 K. Peak current densities of 5 kA/cm2 with peak-to-valley current ratios of 1.1 have been achieved. Theoretical modeling of the structure demonstrates that the major current peak results from the tunneling of light-mass electrons from the relaxed substrate and not from the heavy-mass electrons in the emitter accumulation layer.

AB - Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.8Ge0.2 n-type substrate, which demonstrate negative differential resistance at 298 K. Peak current densities of 5 kA/cm2 with peak-to-valley current ratios of 1.1 have been achieved. Theoretical modeling of the structure demonstrates that the major current peak results from the tunneling of light-mass electrons from the relaxed substrate and not from the heavy-mass electrons in the emitter accumulation layer.

UR - https://www.scopus.com/pages/publications/0000323725

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U2 - 10.1063/1.1309020

DO - 10.1063/1.1309020

M3 - Article

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SN - 0003-6951

VL - 77

SP - 1653

EP - 1655

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Si/SiGe electron resonant tunneling diodes

Abstract

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