Si3N4/Al2O3 stack layer passivation for InAlAs/InGaAs InP-based HEMTs with good DC and RF performances

Peng Ding, Chen Chen, Muhammad Asif, Xi Wang, Jiebin Niu, Feng Yang, Wuchang Ding, Yongbo Su, Dahai Wang, Zhi Jin

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


This paper introduces a novel surface passivation using Si3N4 (20-nm)/Al2O3 (15-nm) stack layers in InAlAs/InGaAs InP-based high-electron-mobility transistors (HEMTs). The new technology gives rise to good dc and RF performances in InP-based HEMTs. Notably different from the conventional Si3N4 approach, an ultrathin layer of Al2O3 (15-nm) grown by atomic layer deposition is incorporated in the surface passivation, which is the main feature of this technology. After passivation, the Si3N4/Al2O3-passivated HEMTs exhibit a superior dc performance demonstrating a high drain current up to 800 mA/mm, an increased peak transconductance of 1100 mS/mm at VGS = -0.2 V and a slight threshold voltage shift of ΔVth = +120 mV. In terms of their RF performance, a maximum oscillation frequency (fmax) up to 340 GHz has been obtained, showing an excellent quality of the surface passivation. A physical explanation is addressed over why the good dc and RF performances have been achieved.

Original languageEnglish (US)
Pages (from-to)49-54
Number of pages6
JournalIEEE Journal of the Electron Devices Society
Issue number1
StatePublished - 2018

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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