Abstract
Thin film, small particle, and fine grained materials have long been known to behave differently from their bulk counterparts, and as such, these differences have been termed size effects. The origins of size effects, though well known for some materials, in ferroelectrics are largely misunderstood. Currently inhibiting the application of ferroelectrics, these effects become commercially important in devices such as MEM's, MLC's, and DRAM's. Included in such structures are ferroelectric layers with thicknesses or grains approaching the critical size below which ferroelectric properties degrade. Epitaxial BaTiO3 thin film heterostructures utilizing conductive oxide electrodes have been deposited by PLD, while 4-circle x-ray diffraction, electrical property measurements, and RBS have been applied to characterize the films. The Curie temperatures for BaTiO3 films were found to be depressed by as much as 150 °C, with the magnitude of this depression believed to be dependent upon the coherent crystal size of the films.
Original language | English (US) |
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Pages | 333-336 |
Number of pages | 4 |
State | Published - 1996 |
Event | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA Duration: Aug 18 1996 → Aug 21 1996 |
Other
Other | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) |
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City | East Brunswick, NJ, USA |
Period | 8/18/96 → 8/21/96 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering