Slight etching of silicon to control post-RIE damage

D. K. Hwang; K. Torek; J. Ruzyllo

Slight etching of silicon to control post-RIE damage

D. K. Hwang, K. Torek, J. Ruzyllo

Materials Research Institute (MRI)

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

The goal in the present study was to investigate the use of chemical etching methods to slightly etch silicon and remove the heavily damaged layer and to determine if it is beneficial to surface conditioning after CHF₃ reactive ion etching. The etching methods studied include UV enhanced Cl₂ and remote plasma Ar/NF₃ processes.

Original language	English (US)
Pages	137-139
Number of pages	3
State	Published - 1996
Event	Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA Duration: May 13 1996 → May 14 1996

Other

Other	Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID
City	Santa Clara, CA, USA
Period	5/13/96 → 5/14/96

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "Slight etching of silicon to control post-RIE damage",

abstract = "The goal in the present study was to investigate the use of chemical etching methods to slightly etch silicon and remove the heavily damaged layer and to determine if it is beneficial to surface conditioning after CHF3 reactive ion etching. The etching methods studied include UV enhanced Cl2 and remote plasma Ar/NF3 processes.",

author = "Hwang, {D. K.} and K. Torek and J. Ruzyllo",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID ; Conference date: 13-05-1996 Through 14-05-1996",

year = "1996",

language = "English (US)",

pages = "137--139",

}

TY - CONF

T1 - Slight etching of silicon to control post-RIE damage

AU - Hwang, D. K.

AU - Torek, K.

AU - Ruzyllo, J.

PY - 1996

Y1 - 1996

N2 - The goal in the present study was to investigate the use of chemical etching methods to slightly etch silicon and remove the heavily damaged layer and to determine if it is beneficial to surface conditioning after CHF3 reactive ion etching. The etching methods studied include UV enhanced Cl2 and remote plasma Ar/NF3 processes.

AB - The goal in the present study was to investigate the use of chemical etching methods to slightly etch silicon and remove the heavily damaged layer and to determine if it is beneficial to surface conditioning after CHF3 reactive ion etching. The etching methods studied include UV enhanced Cl2 and remote plasma Ar/NF3 processes.

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M3 - Paper

AN - SCOPUS:0029712950

SP - 137

EP - 139

T2 - Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID

Y2 - 13 May 1996 through 14 May 1996

ER -

Slight etching of silicon to control post-RIE damage

Abstract

Other

All Science Journal Classification (ASJC) codes

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