Small-signal and 30-GHz power performance of AlGaN/GaN HFETs without back barriers

Masataka Higashiwaki, Yi Pei, Rongmmg Chu, Umesh K. Mishra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Recently, back barrier structures using Al GaN orlnGaN have commonly been employed for GaN hetero structure field-effect transistors (HFETs) with a goal of developing high-power amplifiers in the mm-wave frequency range [1-4]. However, the back barrier possibly causes some disadvantages suchas decreases in electron density (ns) and thermal conductivity in exchange for an improvement on output conductance due to its strong carrier confinement. In this work, we characterized capabilities of AlGaN/GaN HFETs without a back barrier for the mm-wave high-power applications. To enhance charge control, the device relied solely on a high gate aspect ratio design by using an extremely thin AlGaN top barrier instead of the back barrier. The decrease in ns caused by the thin AlGaN barrier can be compensated by SiNx deposition [5]. Similar device structures with a gate length (Lg) of 60 nm have dem onstrated record RF small-signal characteristics in previous work [6]; therefore, we studied the applicability of this concept to large-signal applications.

Original languageEnglish (US)
Title of host publication67th Device Research Conference, DRC 2009
Number of pages2
StatePublished - Dec 11 2009
Event67th Device Research Conference, DRC 2009 - University Park, PA, United States
Duration: Jun 22 2009Jun 24 2009

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other67th Device Research Conference, DRC 2009
Country/TerritoryUnited States
CityUniversity Park, PA

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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