Small signal and power performance of AlGaN/GaN HFETs grown on semi-insulating SiC

A. Weiszt; R. Dietrich; J. S. Lee; A. Vescan; H. Leier; E. L. Pinar; Joan Marie Redwing; H. Sledzikc

Small signal and power performance of AlGaN/GaN HFETs grown on semi-insulating SiC

A. Weiszt, R. Dietrich, J. S. Lee, A. Vescan, H. Leier, E. L. Pinar, Joan Marie Redwing, H. Sledzikc

Research output: Contribution to journal › Article › peer-review

Abstract

The performance of AlGaN/GaN HFETS grown on semi-insulating SiC substrate is discussed. A record transconductance of 300mS/mm for a device with a gate length of 0.3μm and output power levels above 4W CW at 10GHz for an unpassivated 1.6mm device is demonstrated.

Original language	English (US)
Journal	Microwave Engineering Europe
Issue number	DECEMBER/JANUARY
State	Published - Dec 1 2001

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

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title = "Small signal and power performance of AlGaN/GaN HFETs grown on semi-insulating SiC",

abstract = "The performance of AlGaN/GaN HFETS grown on semi-insulating SiC substrate is discussed. A record transconductance of 300mS/mm for a device with a gate length of 0.3μm and output power levels above 4W CW at 10GHz for an unpassivated 1.6mm device is demonstrated.",

author = "A. Weiszt and R. Dietrich and Lee, {J. S.} and A. Vescan and H. Leier and Pinar, {E. L.} and Redwing, {Joan Marie} and H. Sledzikc",

year = "2001",

month = dec,

day = "1",

language = "English (US)",

journal = "Microwave Engineering Europe",

issn = "0960-667X",

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T1 - Small signal and power performance of AlGaN/GaN HFETs grown on semi-insulating SiC

AU - Weiszt, A.

AU - Dietrich, R.

AU - Lee, J. S.

AU - Vescan, A.

AU - Leier, H.

AU - Pinar, E. L.

AU - Redwing, Joan Marie

AU - Sledzikc, H.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - The performance of AlGaN/GaN HFETS grown on semi-insulating SiC substrate is discussed. A record transconductance of 300mS/mm for a device with a gate length of 0.3μm and output power levels above 4W CW at 10GHz for an unpassivated 1.6mm device is demonstrated.

AB - The performance of AlGaN/GaN HFETS grown on semi-insulating SiC substrate is discussed. A record transconductance of 300mS/mm for a device with a gate length of 0.3μm and output power levels above 4W CW at 10GHz for an unpassivated 1.6mm device is demonstrated.

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M3 - Article

AN - SCOPUS:0035560477

SN - 0960-667X

JO - Microwave Engineering Europe

JF - Microwave Engineering Europe

IS - DECEMBER/JANUARY

ER -

Small signal and power performance of AlGaN/GaN HFETs grown on semi-insulating SiC

Abstract

All Science Journal Classification (ASJC) codes

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