Abstract
The performance of AlGaN/GaN HFETS grown on semi-insulating SiC substrate is discussed. A record transconductance of 300mS/mm for a device with a gate length of 0.3μm and output power levels above 4W CW at 10GHz for an unpassivated 1.6mm device is demonstrated.
Original language | English (US) |
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Journal | Microwave Engineering Europe |
Issue number | DECEMBER/JANUARY |
State | Published - Dec 1 2001 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering