@inproceedings{cc8f5e8ec4d246828204659a9a9bef4e,
title = "Sodium, rubidium and cesium in the gate oxides of SiC MOSFETs",
abstract = "Large group-I elements such as sodium, rubidium and cesium have recently been incorporated in the gate oxide of SiC power MOSFETs. In the case of sodium incorporation, enhanced field effect mobilities have been definitively observed. Based on density functional calculations, we find large group-I elements serve as shallow impurities near the interface. The enhanced mobility, observed in the case of sodium, can be explained in terms of an impurity band model.",
author = "Tuttle, {B. R.} and S. Dhar and Ryu, {S. H.} and X. Zhu and Williams, {J. R.} and Feldman, {L. C.} and Pantelides, {S. T.}",
note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.453",
language = "English (US)",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "453--456",
editor = "Devaty, {Robert P.} and Michael Dudley and Chow, {T. Paul} and Neudeck, {Philip G.}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
}