Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure

Murat Okandan, Stephen J. Fonash, Osama O. Awadelkarim, Y. David Chan, Fred Preuninger

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Gate leakage current densities on the order of nA/μm2 at operating voltage levels have been observed in MOSFET's that were processed in a high-density plasma (HDP) oxide etch tool, yet these transistors have performance parameters that are within 10% of controls. These high gate leakage currents seen in the HDP etched devices were not observed in controls. Direct observation shows that these HDP exposed devices have light emission at higher voltages in the region where the gate poly-Si crosses the birds beak. Light emission in this region is also not observed in controls.

Original languageEnglish (US)
Pages (from-to)388-394
Number of pages7
JournalIEEE Electron Device Letters
Issue number8
StatePublished - Aug 1996

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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