Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure

Murat Okandan; Stephen J. Fonash; Osama O. Awadelkarim; Y. David Chan; Fred Preuninger

doi:10.1109/55.511584

Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure

Murat Okandan, Stephen J. Fonash, Osama O. Awadelkarim, Y. David Chan, Fred Preuninger

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Gate leakage current densities on the order of nA/μm² at operating voltage levels have been observed in MOSFET's that were processed in a high-density plasma (HDP) oxide etch tool, yet these transistors have performance parameters that are within 10% of controls. These high gate leakage currents seen in the HDP etched devices were not observed in controls. Direct observation shows that these HDP exposed devices have light emission at higher voltages in the region where the gate poly-Si crosses the birds beak. Light emission in this region is also not observed in controls.

Original language	English (US)
Pages (from-to)	388-394
Number of pages	7
Journal	IEEE Electron Device Letters
Volume	17
Issue number	8
DOIs	https://doi.org/10.1109/55.511584
State	Published - Aug 1996

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure",

abstract = "Gate leakage current densities on the order of nA/μm2 at operating voltage levels have been observed in MOSFET's that were processed in a high-density plasma (HDP) oxide etch tool, yet these transistors have performance parameters that are within 10% of controls. These high gate leakage currents seen in the HDP etched devices were not observed in controls. Direct observation shows that these HDP exposed devices have light emission at higher voltages in the region where the gate poly-Si crosses the birds beak. Light emission in this region is also not observed in controls.",

author = "Murat Okandan and Fonash, {Stephen J.} and Awadelkarim, {Osama O.} and Chan, {Y. David} and Fred Preuninger",

year = "1996",

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volume = "17",

pages = "388--394",

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AU - Okandan, Murat

AU - Fonash, Stephen J.

AU - Awadelkarim, Osama O.

AU - Chan, Y. David

AU - Preuninger, Fred

PY - 1996/8

Y1 - 1996/8

N2 - Gate leakage current densities on the order of nA/μm2 at operating voltage levels have been observed in MOSFET's that were processed in a high-density plasma (HDP) oxide etch tool, yet these transistors have performance parameters that are within 10% of controls. These high gate leakage currents seen in the HDP etched devices were not observed in controls. Direct observation shows that these HDP exposed devices have light emission at higher voltages in the region where the gate poly-Si crosses the birds beak. Light emission in this region is also not observed in controls.

AB - Gate leakage current densities on the order of nA/μm2 at operating voltage levels have been observed in MOSFET's that were processed in a high-density plasma (HDP) oxide etch tool, yet these transistors have performance parameters that are within 10% of controls. These high gate leakage currents seen in the HDP etched devices were not observed in controls. Direct observation shows that these HDP exposed devices have light emission at higher voltages in the region where the gate poly-Si crosses the birds beak. Light emission in this region is also not observed in controls.

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JO - IEEE Electron Device Letters

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Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure

Abstract

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