Sol-gel derived SrBi2Ta2O9 thin films and electrical properties

K. Yamakawa; D. Ravichandran; A. S. Bhalla; S. Trolier-McKinstry; J. P. Dougherty; R. Roy

doi:10.1080/07315179608204766

Sol-gel derived SrBi₂Ta₂O₉ thin films and electrical properties

K. Yamakawa, D. Ravichandran, A. S. Bhalla, S. Trolier-McKinstry, J. P. Dougherty, R. Roy

Research output: Contribution to journal › Article › peer-review

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Abstract

Ferroelectric SrBi₂Ta₂O₉ thin films were prepared from Sr metals, Ta-ethoxide and Bi, 2-ethylhexanoate. The films were prepared from both stoichiometric and 10 mol% Bi rich solutions. The stoichiometric film crystallized at 800°C had a spontaneous polarization value of 5 μC/cm2. The Bi rich film had lower crystallinity, finer grains and a smaller polarization. It was found to be necessary to anneal the films at high temperatures or for long time to achieve ferroelectricity. The non-crystalline states of sol-gel derived films differ from that observed in films deposited by physical vapor deposition. Crack free films were produced with the film thicknesses of 0.4 μm.

Original language	English (US)
Pages (from-to)	41-45
Number of pages	5
Journal	Ferroelectrics, Letters Section
Volume	22
Issue number	1-2
DOIs	https://doi.org/10.1080/07315179608204766
State	Published - 1996

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1080/07315179608204766

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title = "Sol-gel derived SrBi2Ta2O9 thin films and electrical properties",

abstract = "Ferroelectric SrBi2Ta2O9 thin films were prepared from Sr metals, Ta-ethoxide and Bi, 2-ethylhexanoate. The films were prepared from both stoichiometric and 10 mol% Bi rich solutions. The stoichiometric film crystallized at 800°C had a spontaneous polarization value of 5 μC/cm2. The Bi rich film had lower crystallinity, finer grains and a smaller polarization. It was found to be necessary to anneal the films at high temperatures or for long time to achieve ferroelectricity. The non-crystalline states of sol-gel derived films differ from that observed in films deposited by physical vapor deposition. Crack free films were produced with the film thicknesses of 0.4 μm.",

author = "K. Yamakawa and D. Ravichandran and Bhalla, {A. S.} and S. Trolier-McKinstry and Dougherty, {J. P.} and R. Roy",

note = "Funding Information: This work was supported by the Defence Advanced Research Project Agency (DARPA) under the contract No : DN 00014-90-5-4140.",

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T1 - Sol-gel derived SrBi2Ta2O9 thin films and electrical properties

AU - Yamakawa, K.

AU - Ravichandran, D.

AU - Bhalla, A. S.

AU - Trolier-McKinstry, S.

AU - Dougherty, J. P.

AU - Roy, R.

N1 - Funding Information: This work was supported by the Defence Advanced Research Project Agency (DARPA) under the contract No : DN 00014-90-5-4140.

PY - 1996

Y1 - 1996

N2 - Ferroelectric SrBi2Ta2O9 thin films were prepared from Sr metals, Ta-ethoxide and Bi, 2-ethylhexanoate. The films were prepared from both stoichiometric and 10 mol% Bi rich solutions. The stoichiometric film crystallized at 800°C had a spontaneous polarization value of 5 μC/cm2. The Bi rich film had lower crystallinity, finer grains and a smaller polarization. It was found to be necessary to anneal the films at high temperatures or for long time to achieve ferroelectricity. The non-crystalline states of sol-gel derived films differ from that observed in films deposited by physical vapor deposition. Crack free films were produced with the film thicknesses of 0.4 μm.

AB - Ferroelectric SrBi2Ta2O9 thin films were prepared from Sr metals, Ta-ethoxide and Bi, 2-ethylhexanoate. The films were prepared from both stoichiometric and 10 mol% Bi rich solutions. The stoichiometric film crystallized at 800°C had a spontaneous polarization value of 5 μC/cm2. The Bi rich film had lower crystallinity, finer grains and a smaller polarization. It was found to be necessary to anneal the films at high temperatures or for long time to achieve ferroelectricity. The non-crystalline states of sol-gel derived films differ from that observed in films deposited by physical vapor deposition. Crack free films were produced with the film thicknesses of 0.4 μm.

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Sol-gel derived SrBi₂Ta₂O₉ thin films and electrical properties

Abstract

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