Sol-gel fabrication of oriented PZT thin films: Effect of buffer layer in promoting epitaxial growth

Dong Soo Paik; A. V.Prasada Rao; S. Komarneni

doi:10.1080/00150199808232339

Sol-gel fabrication of oriented PZT thin films: Effect of buffer layer in promoting epitaxial growth

Dong Soo Paik
, A. V.Prasada Rao
, S. Komarneni

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films were deposited onto platinum coated silicon substrates with and without PbTiO₃ (PT) buffer layers. PZT thin films on pure Pt coated Si (100) substrates showed (100) and (110) orientations with 100 to 80 intensity while these films on the same substrate with an intermediate PT buffer layer showed preferred (100) orientation. The intermediate buffer layer seems to promote epitaxial growth. Increase in thickness of the intermediate buffer layer resulted in lowering of remanent polarization and an increase of coercive field parameters.

Original language	English (US)
Pages (from-to)	141-151
Number of pages	11
Journal	Ferroelectrics
Volume	211
Issue number	1 /4
DOIs	https://doi.org/10.1080/00150199808232339
State	Published - 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1080/00150199808232339

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title = "Sol-gel fabrication of oriented PZT thin films: Effect of buffer layer in promoting epitaxial growth",

abstract = "Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited onto platinum coated silicon substrates with and without PbTiO3 (PT) buffer layers. PZT thin films on pure Pt coated Si (100) substrates showed (100) and (110) orientations with 100 to 80 intensity while these films on the same substrate with an intermediate PT buffer layer showed preferred (100) orientation. The intermediate buffer layer seems to promote epitaxial growth. Increase in thickness of the intermediate buffer layer resulted in lowering of remanent polarization and an increase of coercive field parameters.",

author = "Paik, \{Dong Soo\} and Rao, \{A. V.Prasada\} and S. Komarneni",

year = "1998",

doi = "10.1080/00150199808232339",

language = "English (US)",

volume = "211",

pages = "141--151",

journal = "Ferroelectrics",

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publisher = "Taylor and Francis Ltd.",

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T1 - Sol-gel fabrication of oriented PZT thin films

T2 - Effect of buffer layer in promoting epitaxial growth

AU - Paik, Dong Soo

AU - Rao, A. V.Prasada

AU - Komarneni, S.

PY - 1998

Y1 - 1998

N2 - Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited onto platinum coated silicon substrates with and without PbTiO3 (PT) buffer layers. PZT thin films on pure Pt coated Si (100) substrates showed (100) and (110) orientations with 100 to 80 intensity while these films on the same substrate with an intermediate PT buffer layer showed preferred (100) orientation. The intermediate buffer layer seems to promote epitaxial growth. Increase in thickness of the intermediate buffer layer resulted in lowering of remanent polarization and an increase of coercive field parameters.

AB - Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited onto platinum coated silicon substrates with and without PbTiO3 (PT) buffer layers. PZT thin films on pure Pt coated Si (100) substrates showed (100) and (110) orientations with 100 to 80 intensity while these films on the same substrate with an intermediate PT buffer layer showed preferred (100) orientation. The intermediate buffer layer seems to promote epitaxial growth. Increase in thickness of the intermediate buffer layer resulted in lowering of remanent polarization and an increase of coercive field parameters.

UR - https://www.scopus.com/pages/publications/0031628242

UR - https://www.scopus.com/pages/publications/0031628242#tab=citedBy

U2 - 10.1080/00150199808232339

DO - 10.1080/00150199808232339

M3 - Article

AN - SCOPUS:0031628242

SN - 0015-0193

VL - 211

SP - 141

EP - 151

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1 /4

ER -

Sol-gel fabrication of oriented PZT thin films: Effect of buffer layer in promoting epitaxial growth

Abstract

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