Sol-gel silicate thin-film electronic properties

W. L. Warren, P. M. Lenahan, C. J. Brinker, C. S. Ashley, S. T. Reed, G. R. Shaffer

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


We have explored the effects of various processing parameters on the dielectric and electronic integrity of sol-gel-derived silicate thin films and have identified several factors that strongly affect the thin-film electronic properties. We find that sol-gel dielectrics can exhibit excellent dielectric integrity: viz., low interface trap densities and fairly good insulating properties approaching those of a thermally grown silicon dioxide film on silicon.

Original languageEnglish (US)
Pages (from-to)4404-4408
Number of pages5
JournalJournal of Applied Physics
Issue number8
StatePublished - 1991

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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