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Sol-gel silicate thin-film electronic properties

  • W. L. Warren
  • , P. M. Lenahan
  • , C. J. Brinker
  • , C. S. Ashley
  • , S. T. Reed
  • , G. R. Shaffer

Research output: Contribution to journalArticlepeer-review

Abstract

We have explored the effects of various processing parameters on the dielectric and electronic integrity of sol-gel-derived silicate thin films and have identified several factors that strongly affect the thin-film electronic properties. We find that sol-gel dielectrics can exhibit excellent dielectric integrity: viz., low interface trap densities and fairly good insulating properties approaching those of a thermally grown silicon dioxide film on silicon.

Original languageEnglish (US)
Pages (from-to)4404-4408
Number of pages5
JournalJournal of Applied Physics
Volume69
Issue number8
DOIs
StatePublished - 1991

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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