Abstract
We have explored the effects of various processing parameters on the dielectric and electronic integrity of sol-gel-derived silicate thin films and have identified several factors that strongly affect the thin-film electronic properties. We find that sol-gel dielectrics can exhibit excellent dielectric integrity: viz., low interface trap densities and fairly good insulating properties approaching those of a thermally grown silicon dioxide film on silicon.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 4404-4408 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 69 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1991 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy
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